Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin-film lithium niobate electro-optical modulator and preparation method thereof

An electro-optical modulator, lithium niobate technology, applied in the field of optical communication, to achieve the effect of improving feasibility, increasing spacing, and increasing width

Inactive Publication Date: 2021-08-31
江苏铌奥光电科技有限公司
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the current field of high-speed optical communication, the modulation rate has generally transitioned from 100G to 400G, and it is very likely that the modulation rate will directly advance to 1.6T in the future.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin-film lithium niobate electro-optical modulator and preparation method thereof
  • Thin-film lithium niobate electro-optical modulator and preparation method thereof
  • Thin-film lithium niobate electro-optical modulator and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0054] The technical solutions of the present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0055] Such as figure 1 and Figure 10 As shown, a thin-film lithium niobate electro-optic modulator includes a substrate 1, a buried oxide layer 2, and a lithium niobate layer 3 sequentially arranged from bottom to top, and the upper surface of the lithium niobate layer is etched to form a thin-film lithium niobate optical modulator. The waveguide 4 and the cladding layer 5 are arranged on the upper surface of the lithium niobate layer and cover the thin-film lithium niobate optical waveguide; the thin-film lithium niobate optical waveguide includes an input grating 11, a 1*2 beam splitter 12, and a Mach-Zehnder structure 13, 2* 1 beam combiner 14 and output grating 15; the input grating is connected to the input end of the 1*2 beam splitter, and the output end of the 1*2 beam splitter is connected to the input end...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Widthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a thin-film lithium niobate electro-optical modulator and a preparation method, the thin-film lithium niobate electro-optical modulator comprises a silicon substrate, a buried oxide layer and a lithium niobate layer which are arranged from bottom to top, and the upper surface of the lithium niobate layer is etched to form a thin-film lithium niobate optical waveguide; the thin-film lithium niobate optical waveguide comprises a Mach-Zehnder structure; two sides of each optical waveguide arm of the Mach-Zehnder structure are respectively provided with a traveling wave signal electrode and a traveling wave grounding electrode, and a capacitance load type T structure electrode used for modulating optical signals in the optical waveguide arms is arranged between the traveling wave signal electrode and the traveling wave grounding electrode; and the two sides and the lower portion of each optical waveguide arm of the Mach-Zehnder structure are provided with hollowed-out isolation structures used for reducing the effective refractive index of microwave signals. According to the invention, the thin-film lithium niobate electro-optical modulator with ultra-low driving voltage, ultra-low microwave loss and ultra-large electro-optical bandwidth is realized under the silicon-based substrate, and ultra-high-speed and ultra-low-energy-consumption electro-optical modulation in the fields of optical communication, optical sensing, optical integration and the like in the future is facilitated.

Description

technical field [0001] The invention belongs to the fields of optical communication, optical sensing and optical integration, and specifically relates to a thin-film lithium niobate electro-optical modulator and a preparation method. Background technique [0002] With the continuous development of the information age, a large number of new information industries are constantly approaching people's daily life, such as 5G, cloud computing, big data processing, artificial intelligence, etc. These new technologies have brought great benefits to our daily life. At the same time, it is more convenient, and it also promotes our demand for high-speed, large-bandwidth, and low-power data processing and transmission technologies. Taking the data center, a typical application in short-distance optical communication, as an example, the network traffic speed of the pure data center is greatly increased, while the overall data capacity inside the data center will reach a high level, and t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G02F1/03
CPCG02F1/0305G02F1/0316
Inventor 胡紫阳陈力锋蔡文杰
Owner 江苏铌奥光电科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products