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Lithographic apparatus with thermal conditioning system for conditioning the wafer

A lithography equipment and thermal adjustment technology, applied in microlithography exposure equipment, optomechanical equipment, optics, etc., can solve the problems of undesired thermal load of wafers and undesired thermal deformation of wafers

Pending Publication Date: 2021-08-31
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially non-actinic radiation may cause an undesired thermal load on the wafer and thus an undesired thermally induced deformation of the wafer during imaging

Method used

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  • Lithographic apparatus with thermal conditioning system for conditioning the wafer
  • Lithographic apparatus with thermal conditioning system for conditioning the wafer
  • Lithographic apparatus with thermal conditioning system for conditioning the wafer

Examples

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Embodiment Construction

[0034] figure 1 is a diagram of an extreme ultraviolet (EUV) lithography system comprising a radiation source SO and a lithography apparatus LA. The radiation source SO comprises an EUV radiation source such as a laser produced plasma (LLP) EUV source or a free electron laser (FEL). The lithographic apparatus LA includes an EUV scanner. The radiation source SO is configured to generate a beam B of EUV radiation and provide the beam B of EUV radiation to the lithographic apparatus LA. The lithographic apparatus LA comprises an illumination system IL, a support structure MT configured to support a patterning device MA (eg, a mask), a projection system (or: projection optics) PS, and a substrate configured to support a substrate W Support WT.

[0035] The illumination system IL is configured to condition the EUV radiation beam B before it is incident on the patterning device MA. Furthermore, the illumination system IL may comprise a facet field mirror arrangement 10 and a fa...

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PUM

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Abstract

A lithographic apparatus receives radiation for imaging a pattern via projection optics onto a plurality of target areas on a substrate. Each target area receives a heat load through absorption of the radiation during imaging. The apparatus has thermal conditioning system to maintain the substrate at a spatially uniform, constant first temperature during the imaging. The thermal conditioning system has a heat sink operative to extract heat from the substrate; and a first heater system that supplies during the imaging, a first additional heat load to a part of the substrate. This part is the complement of the specific target area onto which the pattern is being imaged. The first additional heat load per unit area equals or exceeds a magnitude of the heat load per unit area.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from EP application 18213862.8 filed on 19 December 2018, which is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to a lithographic apparatus. Background technique [0004] thermal effect [0005] The properties of physical substances tend to change with temperature. Thermally induced changes in the properties of the physical components of the system can be critical to the performance of the system. In general, it is therefore preferred to thermally stabilize the system via controlled heating and / or controlled cooling of the components. Such stabilization reduces variations in the temperature-related properties of the component caused by thermal loads received from the component's environment in operational use of the system. For example, the component may be thermally connected to a heat sink that extracts heat from the com...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70875G03F7/7005G03F7/70783
Inventor M·A·范登布林克
Owner ASML NETHERLANDS BV