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Compound semiconductor epitaxial wafer and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems that the effect is not necessarily sufficient, and achieve low-cost effects

Pending Publication Date: 2021-09-03
SHIN-ETSU HANDOTAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] On the other hand, when there are non-luminous spots generated from the crystal during epitaxial growth, the effect is not necessarily sufficient only by optimizing the nitrogen concentration and its distribution as disclosed in Patent Document 2.

Method used

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  • Compound semiconductor epitaxial wafer and manufacturing method thereof
  • Compound semiconductor epitaxial wafer and manufacturing method thereof
  • Compound semiconductor epitaxial wafer and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076] Epitaxial wafers were produced by the HVPE method as follows.

[0077] [preparation process]

[0078] An n-type GaP single crystal substrate and high-purity gallium (Ga) were placed at predetermined positions in an epitaxial reactor with a quartz boat for accumulating Ga, respectively. GaP substrate is added with 3~10×10 17 (atoms / cm 3 ) of tellurium (Te), and is circular with a diameter of 50 mm and has a face offset by 10 (°) from the (100) to the [011] direction. They are arranged on the supporting part at the same time, and the supporting part is rotated eight times per minute.

[0079] Next, nitrogen (N 2 ) gas into the reactor for 20 minutes, after fully replacing the air, introduce high-purity hydrogen (H 2 ), and stop the flow of nitrogen, and enter the heating process. After confirming that the temperature of the Ga-mounted quartz boat installation part and the GaP single crystal substrate installation part are kept at a fixed temperature, the GaAs proces...

Embodiment 2

[0094] In addition to setting the n-type dopant (Te) concentration in the nitrogen concentration fixed region from 0.9×10 16 (atoms / cm 3 ) to 0.2×10 16 (atoms / cm 3 ) and carry out gradient doping, all the same as in Example 1. The results are shown in Table 1 together.

Embodiment 3

[0096] In addition to setting the n-type dopant (Te) concentration in the nitrogen concentration fixed region from 0.8×10 16 (atoms / cm 3 ) to 0.2×10 16 (atoms / cm 3 ) and carry out gradient doping, all the same as in Example 1. The results are shown in Table 1 together.

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Abstract

The purpose of the present invention is to provide: a compound semiconductor epitaxial wafer having excellent lifespan characteristics; and a method for producing the compound semiconductor epitaxial wafer. According to the compound semiconductor epitaxial wafer, a p-n junction interface serving as a light emitting part is formed by a p-type GaAs1-xPx (0.45 < = x < = 1.0) layer and an n-type GaAs1-xPx (0.45 < = x < = 1.0) layer. A compound semiconductor epitaxial wafer in which a region having a fixed nitrogen concentration is formed in a portion including the p-n junction interface. In the region where the nitrogen concentration is fixed, Te is doped as an n-type dopant so as to gradually decrease in the direction from the n-type GaAs1-xPx layer to the p-type GaAs1-xPx layer within a range of 2.0*10<16> to 0.2*10<16> (atoms / cm3).

Description

technical field [0001] The invention relates to a compound semiconductor epitaxial wafer used for a light-emitting diode and a manufacturing method thereof. Background technique [0002] Light-emitting diodes made of III-V compound semiconductors, such as gallium arsenide phosphide GaAs 1-x P x (Where, 0.45≤x≤1.0) The light-emitting diode is obtained by forming a multi-layer n-type gallium arsenide phosphide GaAs on a single crystal substrate of n-type gallium phosphide (GaP) or gallium arsenide (GaAs) 1-x P x (or gallium phosphide) epitaxial layer, and further thermally diffuse p-type impurities such as Zn in the uppermost layer of the epitaxial layer to form a p-n junction to form a light emitting layer. [0003] Alternatively, it is also possible to form n-type gallium arsenide phosphide GaAs 1-x P x (or gallium phosphide) epitaxial layer, by introducing p-type impurities such as Zn while forming p-type gallium arsenide phosphide GaAs 1-x P x (or gallium phosphide)...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/30H01L33/00
CPCH01L33/305H01L33/0062
Inventor 酒井健滋桑原政彦
Owner SHIN-ETSU HANDOTAI CO LTD