Manufacturing method of grain packaging structure

A technology of packaging structure and manufacturing method, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of power chip thermal energy not easily dissipated, time-consuming and labor-intensive, etc.

Pending Publication Date: 2021-09-10
COMCHIP TECH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The traditional packaging process is to package the semiconductor die cut from the wafer one by one. In addition to die bonding, the process also includes wire bonding, molding, etc., which is quite time-consuming. laborious
Furthermore, the traditional method is to electrically connect the power chips in the power module by bonding wires. The heat generated by the power chips is not easily dissipated effectively.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of grain packaging structure
  • Manufacturing method of grain packaging structure
  • Manufacturing method of grain packaging structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] In order to make the description of the embodiments of the present invention more detailed and complete, the following provides illustrative descriptions for the implementations and specific examples of the present invention; but this is not the only form for implementing or using the specific embodiments of the present invention. The various embodiments disclosed below can be combined or replaced with each other when beneficial, and other embodiments can also be added to one embodiment, without further description or illustration.

[0048] In the following description, numerous specific details will be set forth in order to enable readers to fully understand the following embodiments. However, embodiments of the invention may be practiced without these specific details. In other instances, well-known structures and devices are only schematically shown in order to simplify the drawings.

[0049] In the embodiments and claims, "a" and "the" can generally refer to a sing...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for manufacturing a grain package structure. The method includes the following operations. A conductive substrate having a plurality of recesses is provided. Crystal grains are arranged in the grooves. A conductive layer is formed to cover the crystal grains and the conductive substrate; A patterned photoresist layer is formed on the conductive layer, wherein the patterned photoresist layer is provided with a plurality of openings to expose a plurality of areas of the conductive layer. A shield is formed on each region of the conductive layer. After the shield is formed, the patterned photoresist layer is removed. The conductive layer and the conductive substrate thereunder are selectively etched to a predetermined depth using the shield so as to form a plurality of conductive bumps and a plurality of electrodes, the remaining conductive substrate includes a base plate on which the electrodes are located, and the conductive bumps are located on the die. An upper sealing glue layer is formed to cover the bottom plate and the crystal grains, wherein the shield, the conductive bumps or the electrodes are exposed out of the upper sealing glue layer. According to the invention, the miniaturization of the crystal grain packaging structure in the vertical direction can be achieved, and the heat dissipation effect of a power chip can be improved.

Description

technical field [0001] The invention relates to a manufacturing method of a packaging structure, in particular to a manufacturing method of an embedded die packaging structure. Background technique [0002] With the popularization of consumer electronic products, such as mobile phones, tablet computers, notebooks, etc., consumers' demand for high functionality and small size of electronic products is becoming more and more obvious. The chip packaging process is an important step in the process of forming electronic products. In order to reduce the size of the chip package and further improve the performance of the chip package has become an important issue. [0003] The traditional packaging process is to package the semiconductor die cut from the wafer one by one. In addition to die bonding, the process also includes wire bonding, molding, etc., which is quite time-consuming. It takes a lot of work. Furthermore, the traditional method is to electrically connect the power...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/56H01L23/31H01L21/60H01L23/488
CPCH01L23/3128H01L21/56H01L24/11H01L24/13H01L2224/11462H01L2224/13022H01L2224/13018
Inventor 赖建志林泓彣
Owner COMCHIP TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products