Deep ultraviolet light emitting diode and manufacturing method thereof

Abstract

The invention provides a deep ultraviolet light emitting diode and a manufacturing method thereof. The deep ultraviolet light emitting diode comprises a substrate, a template layer, a stress control layer, an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer from bottom to top; the stress control layer is one or two of an Al Ga < 1-a > N / Al Ga < 1-b > N superlattice layer and an Al < c > Ga < 1-c > N non-superlattice layer, the Al Ga < 1-a > N / Al Ga < 1-b > N superlattice layer comprises Al Ga < 1-a > N layers and Al Ga < 1-b > N layers which are periodically and alternately stacked, and the Al < c > Ga < 1-c > N non-superlattice layer comprises at least two layers of structures in which Al components are arranged in a gradient manner. According to the deep ultraviolet light emitting diode and the manufacturing method thereof provided by the technical schemes, lattice mismatch and thermal mismatch between the template layer and the n-type semiconductor layer can be relieved, stress can be gradually released, and then surface cracks are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a deep ultraviolet light emitting diode and a manufacturing method thereof. Background technique [0002] The deep ultraviolet nitride semiconductor light-emitting element has a wavelength range of 200nm to 300nm. Because the emitted deep ultraviolet light can interrupt the DNA or RNA of viruses and bacteria, and directly kill viruses and bacteria, it is widely used in air purification, tap water sterilization, and household use. Sterilization and disinfection fields such as air-conditioning sterilization and automobile air-conditioning sterilization. Deep ultraviolet nitride semiconductor light-emitting elements are generally epitaxially grown on a sapphire substrate using AlGaN-based materials; due to the large lattice mismatch and thermal mismatch between AlGaN and sapphire, the epitaxial growth of AlGaN-based materials is affected by the mismatch of the sapphire substr...

AI Technical Summary

Problems solved by technology

[0003] Among them, in the deep ultraviolet nitride semiconductor light-emitting element with high Al composition, the AlN layer and the n-type AlGaN layer are sequentially formed on the substrate, not only there is a large lattice mismatch and thermal mismatch between the AlN layer and the substrate, and the surface is easy to There are problems of roughness, uneven growth and cracks, and there are also lattice mismatch and thermal mismatch between the AlN layer and the n-type AlGaN layer, which are prone to cracks

Cracks between the AlN layer and the substrate generally use buffer layer technology to release the stress between the substrate and the AlN layer to improve the crystal quality of the AlN layer and reduce the dislocation density; but for the crack between the AlN layer and the n-type AlGaN layer There is no good solution to the crack problem caused by lattice mismatch and thermal mismatch (for example, when the thickness of n-type AlGaN is greater than 2 μm or the Al composition is low, cracks are easy to occur)

[0004] Therefore, a deep ultraviolet light-emitting diode and its manufacturing method are provided to solve the problem of cracks caused by lattice mismatch and thermal mismatch between the AlN layer and the n-type AlGaN layer

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