A guide tube and crystal pulling furnace
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- XIAN ESWIN SILICON WAFER TECH CO LTD
- Publication Date
- 2022-08-02
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Abstract
Description
technical field
[0001] The embodiments of the present invention relate to the technical field of silicon wafer processing, and in particular, to a flow guiding cylinder and a crystal pulling furnace. Background technique
[0002] Most of the single crystal silicon rods are produced by the Czochralski method, or called the Czochralski method, and the commonly used manufacturing equipment is a crystal pulling furnace equipment.
[0003] In the pulling process of single crystal silicon ingots, the guide tube components in the crystal pulling furnace equipment play a key role in providing the temperature gradient required for crystal growth: on the one hand, the guide tube can provide a high temperature gradient for the crystal ingot. The thermal barrier effect is conducive to the heat dissipation of the crystal, forming the temperature gradient required for the crystal growth to improve the crystal growth rate; To maintain its cleanliness, it is more conducive to the heat diss...