Mask blank, phase shift mask, method for manufacturing mask blank, and method for manufacturing phase shift mask

A phase-shift mask and mask blank technology are applied in the fields of mask blank, phase-shift mask, mask blank manufacturing method and phase-shift mask manufacturing method, and can solve the optical characteristics of phase-shift mask of quartz substrate Changes and other issues to achieve the effect of reducing the impact

Pending Publication Date: 2021-09-17
ULVAC COATING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, there arises a problem that the quartz substrate is etched during WET etching of the molybdenum silicide film and the optical characteristics of the phase shift mask change.

Method used

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  • Mask blank, phase shift mask, method for manufacturing mask blank, and method for manufacturing phase shift mask
  • Mask blank, phase shift mask, method for manufacturing mask blank, and method for manufacturing phase shift mask
  • Mask blank, phase shift mask, method for manufacturing mask blank, and method for manufacturing phase shift mask

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Embodiment

[0254] Next, examples according to the present invention will be described.

[0255] In addition, a confirmation test will be described as a specific example of the etching stopper layer 13 in the present invention.

[0256]

[0257] As Example 1, a molybdenum silicide compound film was formed as an etching stopper on a glass substrate using a sputtering method or the like. The molybdenum silicide compound film formed here is a film containing molybdenum, silicon, oxygen, nitrogen, carbon, and the like. The composition of the film was evaluated using Auger electron spectroscopy.

[0258] show the result in Figure 13 .

[0259] like Figure 13 As shown, it can be confirmed that a peak region with a high nitrogen concentration is formed on the left side of the figure.

[0260] Next, in the sputtering for forming the molybdenum silicide compound film, a target having a molybdenum to silicon ratio of 1:2.3 was used, and the nitrogen partial pressure was changed within 0 to...

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Abstract

The invention relates to a mask blank, a phase shift mask, a method for manufacturing the mask blank and a method for manufacturing the phase shift mask. The mask blank of the present invention is a mask blank having a layer that becomes a phase shift mask. The mask blank comprises: a phase shift layer laminated on a transparent substrate; an etching stop layer disposed at a position farther from the transparent substrate than the phase shift layer; and a light shielding layer disposed at a position farther from the transparent substrate than the etching stop layer. The phase shift layer contains chromium. The light shielding layer contains chromium and oxygen. The etch stop layer contains molybdenum silicide and nitrogen, and has a peak region in which the nitrogen concentration peaks at a position close to the light shielding layer in the film thickness direction.

Description

technical field [0001] The present invention relates to a technique suitable for use in a mask blank, a phase shift mask, a method for manufacturing a mask blank, and a method for manufacturing a phase shift mask. Background technique [0002] In recent years, in flat panel displays (FPDs) such as liquid crystal displays and organic EL displays, high definition of panels has been greatly advanced. Along with the high definition of the panel, the miniaturization of the photomask is also progressing. Therefore, the necessity of not only a mask using a light-shielding film, which has been used in the past, but also an edge-enhanced phase shift mask has been increased. [0003] In FPD and the like, miniaturization is required for both the line and space and the pattern of the contact holes. A phase shift mask is required to form fine patterns. [0004] For example, for a contact hole pattern, a large contrast ratio is required at the time of exposure, and a flange-type phase ...

Claims

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Application Information

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IPC IPC(8): G03F1/26G03F1/80
CPCG03F1/26G03F1/80G03F1/38
Inventor 诸沢成浩
Owner ULVAC COATING
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