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Light-emitting device, light-emitting apparatus, display device, electronic apparatus, and lighting device

A technology for light-emitting devices and light-emitting layers, applied in the fields of products or compositions, processes, machines, and lighting devices, can solve problems such as difficulty in designing light-emitting materials

Pending Publication Date: 2021-09-17
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to design a luminescent material that satisfies the above two conditions at the same time

Method used

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  • Light-emitting device, light-emitting apparatus, display device, electronic apparatus, and lighting device
  • Light-emitting device, light-emitting apparatus, display device, electronic apparatus, and lighting device
  • Light-emitting device, light-emitting apparatus, display device, electronic apparatus, and lighting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0076] In this embodiment mode, a light-emitting device according to one embodiment of the present invention will be described below with reference to FIGS. 1 to 5 .

[0077]

[0078] First, the structure of a light-emitting device according to one embodiment of the present invention will be described below with reference to FIG. 1 .

[0079] Figure 1A and Figure 1B It is a schematic cross-sectional view of the light emitting device 150 and the light emitting device 152 according to one embodiment of the present invention.

[0080] The light emitting device 150 and the light emitting device 152 each include a pair of electrodes (electrode 101 and electrode 102 ), and include the EL layer 100 or the EL layer 200 disposed between the pair of electrodes. The EL layer 100 and the EL layer 200 include at least a light-emitting layer 130a and a light-emitting layer 130b.

[0081] in addition, Figure 1A The illustrated EL layer 100 includes functional layers such as a hole inj...

example 1

[0095] Figure 2B An example of energy level correlation in a light-emitting layer of a light-emitting device according to one embodiment of the present invention is shown. In this structural example, the case where the compound 131 uses a TADF material is shown.

[0096] in addition, Figure 2B It is shown that the energy levels of the compound 131 and the compound 132 in the light-emitting layer 130a are correlated. Figure 2B The vertical axis in represents Energy (arbitrary unit). Figure 2B The symbols and symbols in are as follows.

[0097] Host(131): Compound 131

[0098] · Guest (132): Compound 132

[0099] ·T C1 : T1 level of compound 131

[0100] ·S C1 : S1 level of compound 131

[0101] ·S G : S1 level of compound 132

[0102] ·T G : T1 level of compound 132

[0103] Here, the triplet excitation energy of compound 131 generated by current excitation is focused. Compound 131 has TADF properties. Therefore, compound 131 has the function of converting tr...

example 2

[0132] Figure 5C An example of energy level correlation in the light-emitting layer 130a of the light-emitting device 150 and the light-emitting device 152 according to one embodiment of the present invention is shown. Figure 5A The illustrated light-emitting layer 130a includes Compound 131, Compound 132, and Compound 133. In one embodiment of the present invention, the compound 132 is preferably a fluorescent material. Furthermore, in this structural example, compound 131 and compound 133 are combinations that form exciplexes.

[0133]The combination of Compound 131 and Compound 133 may be any combination as long as it can form an exciplex, and one of them is preferably a compound having a function of transporting holes (hole transport), and the other is a compound having a function of transporting electrons ( Electron-transporting compounds). In this case, the donor-acceptor type exciplex is easily formed, and the exciplex can be efficiently formed. In addition, when ...

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Abstract

Provided is a light-emitting device with high light-emission efficiency and reliability. The light-emitting device has a fluorescent light-emitting layer and a phosphorescent light-emitting layer. The host material used in the fluorescent light-emitting layer has the function of converting triplet excitation energy into light emission, and the guest material used in the fluorescent light-emitting layer emits fluorescent light. The molecular structure of the guest material is a structure having a luminophore and a protective group, five or more protective groups being included within one molecule of the guest material. Triplet excitation energy transfer from the host material to the guest material via the Dexter mechanism is suppressed by introducing the protective group into the molecule, used as the protective group is an alkyl group, or a branched chain alkyl group. An overlap exists between the emission spectrum for the host material of the phosphorescent light-emitting layer and the longest wavelength absorption band from the absorption spectrum for the guest material of the phosphorescent light-emitting layer.

Description

technical field [0001] One embodiment of the present invention relates to a light-emitting device or a display device, electronic equipment, and lighting device including the light-emitting device. [0002] Note that one form of the present invention is not limited to the above-mentioned technical field. The technical field of one aspect of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Moreover, one form of this invention relates to a process (process), machine (machine), product (manufacture) or composition (composition of matter). Thus, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, storage devices, A method of driving these devices or a method of manufacturing these devices. Back...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G09F9/30H01L27/32H05B33/12H01L51/50
CPCH05B33/12G09F9/30H10K85/633H10K50/121H10K50/13H10K2101/90Y02P20/55G09F9/335G09F9/301H10K85/00H10K85/631H10K85/346H10K85/654H10K85/6574H10K85/40H10K85/342H10K85/6572G06F3/041H10K2101/30
Inventor 石曾根崇浩大泽信晴濑尾哲史
Owner SEMICON ENERGY LAB CO LTD