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Large-diameter monocrystalline silicon production method and device capable of reducing head oxygen content

A production device and production method technology, which is applied in the field of large-diameter single crystal silicon production methods and devices, can solve the problem that the oxygen content at the head of the ingot cannot be further reduced, and achieve the breakthrough that the oxygen content at the head cannot be further reduced and break the technical bottleneck Effect

Inactive Publication Date: 2021-09-21
宁夏中欣晶圆半导体科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the present invention provides a large-diameter single-crystal silicon production method and device capable of reducing the oxygen content at the head, so as to solve the problem of oxygen at the head of the ingot when the large-diameter single-crystal silicon ingot is drawn in the prior art. Technical issues where the content cannot be further reduced

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  • Large-diameter monocrystalline silicon production method and device capable of reducing head oxygen content
  • Large-diameter monocrystalline silicon production method and device capable of reducing head oxygen content
  • Large-diameter monocrystalline silicon production method and device capable of reducing head oxygen content

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Effect test

experiment example 1 experiment example 3

[0053] Referring to Comparative Example 1, keep other process conditions unchanged, start stirring during the oxygen reduction treatment, and adjust the stirring speed to 2 r / s, 4 r / s, and 6 r / s respectively, and the oxygen content distribution of the obtained single crystal silicon rod The situation was tested, and the test results are shown in Table 3.

[0054] Table 3 Test data of oxygen content distribution in single crystal silicon rods from Experimental Example 1 to Experimental Example 3

[0055]

[0056] It can be seen from Table 3 that only by stirring the silicon melt or changing the stirring speed, the influence on the oxygen content at the head of the single crystal silicon ingot is limited.

[0057] Experimental Example 4~Experimental Example 7

[0058] With reference to Experimental Example 2, keep other process conditions unchanged, start stirring during the oxygen reduction treatment, adjust the stirring speed to 4r / s, take the argon gas flow rate as 75 SLM...

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Abstract

The invention provides a large-diameter monocrystalline silicon production method and device capable of reducing the head oxygen content, and belongs to the technical field of monocrystalline silicon production. During production, after a monocrystalline silicon raw material is melted, an oxygen reduction treatment process is added, and while a silicon melt is stirred, the argon flow is increased to 1.5-3 times of the argon flow after the melting is finished, and / or the pressure in a crystal pulling furnace is increased to 1.5-3 times of the pressure in the furnace after the melting is finished. Practical results show that by means of the method, the oxygen content of the head of the monocrystalline silicon crystal bar can be effectively reduced by about 50%, and the technical bottleneck that the oxygen content of the head of a large-diameter monocrystalline silicon crystal bar cannot be further reduced is effectively broken through.

Description

technical field [0001] The invention belongs to the technical field of single crystal silicon production, and in particular relates to a large-diameter single crystal silicon production method and device capable of reducing the oxygen content of the head. Background technique [0002] During the Czochralski silicon single crystal growth process, the oxygen content at the head of the ingot is often high, which affects the performance of crystalline silicon and devices, and reduces the photoelectric conversion efficiency of silicon solar cells. In the prior art, the main ways to reduce the oxygen content at the head of the ingot include adjusting the crystal rotor and / or crucible rotor, adjusting the furnace pressure, adjusting the flow rate of argon gas, changing the size of the guide tube, etc. [0003] However, when producing large-diameter silicon monocrystalline ingots larger than 8 inches, once the size of the guide tube is designed and finalized, it is not easy to adjus...

Claims

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Application Information

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IPC IPC(8): C30B15/00C30B15/20C30B29/06
CPCC30B15/00C30B15/20C30B29/06
Inventor 伊冉王黎光张兴茂闫龙李小红
Owner 宁夏中欣晶圆半导体科技有限公司