Uncooled tuning type infrared detector

An infrared detector and non-cooling technology, applied in the field of infrared detection, can solve the problems of low infrared detector performance, low pixel scale, poor consistency, etc., and achieve the effect of reducing process difficulty, small chip area, and low cost

Active Publication Date: 2021-09-24
BEIJING NORTH GAOYE TECH CO LTD
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AI Technical Summary

Problems solved by technology

[0010] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides an uncooled tuneable infrared detector, which solves the traditional MEMS process infrared detection The performance of the infrared detector is low, the pixel size is low, the yield rate is low, and the consistency is poor. It effectively improves the infrared absorption rate of the infrared detector, broadens the infrared absorption spectrum of the infrared detector, and increases the infrared absorption spectrum of the infrared detector.

Method used

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  • Uncooled tuning type infrared detector
  • Uncooled tuning type infrared detector
  • Uncooled tuning type infrared detector

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Embodiment Construction

[0061] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that, in the case of no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other.

[0062] In the following description, many specific details are set forth in order to fully understand the present disclosure, but the present disclosure can also be implemented in other ways than described here; obviously, the embodiments in the description are only some of the embodiments of the present disclosure, and Not all examples.

[0063] figure 1 A schematic diagram of a three-dimensional structure of an infrared detector pixel provided by an embodiment of the present disclosure, figure 2 A schematic cross-sectional structure diagram of an infrared detector pixel provided by an embodiment of the present disclosure. com...

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Abstract

The invention relates to an uncooled tuning type infrared detector, a CMOS measuring circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using a CMOS process, the CMOS infrared sensing structure is directly prepared on the CMOS measuring circuit system, and at least one patterned metal interconnection layer is arranged between a reflecting layer and a suspended micro-bridge structure. The patterned metal interconnection layer and the reflecting layer are electrically insulated, and the patterned metal interconnection layer is used for adjusting a resonance mode of the infrared detector. According to the detector, problems of low performance, low pixel scale, low yield, poor consistency and the like of a traditional MEMS process infrared detector are solved, the infrared absorption rate of the infrared detector is effectively improved, the infrared absorption spectrum of the infrared detector is widened, and the infrared absorption spectrum of the infrared detector is increased.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to an uncooled tuned infrared detector. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensing structure is prepared by MEMS (Micro-Elec...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/24
CPCG01J5/24Y02P70/50
Inventor 翟光杰武佩潘辉翟光强
Owner BEIJING NORTH GAOYE TECH CO LTD
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