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Thin film transistor device and preparation method thereof

A thin-film transistor and device technology, which is applied in the field of thin-film transistor devices and their preparation, can solve problems affecting the stability of oxide semiconductor layers, and achieve the effect of preventing negative shift of threshold voltage and improving stability

Active Publication Date: 2021-09-28
CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above deficiencies in the prior art, the object of the present invention is to provide a thin film transistor device and a preparation method thereof, aiming at solving the problem that light affects the stability of the oxide semiconductor layer in the existing thin film transistor device

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  • Thin film transistor device and preparation method thereof
  • Thin film transistor device and preparation method thereof
  • Thin film transistor device and preparation method thereof

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preparation example Construction

[0091] The present invention also provides a method for preparing an indium gallium zinc thin film transistor device, which includes:

[0092] S101, providing a substrate 1;

[0093] S102, depositing a first metal layer on the substrate 1, and patterning the first metal layer to form a gate 2;

[0094] S103, depositing a first protection layer 3 on the substrate 1 and the gate 2, wherein the first protection layer covers the gate;

[0095] S104, sequentially depositing an oxide and a second metal layer on the first protective layer 3, and patterning the second metal layer to form a second metal layer after the first patterning process, and then patterning the second metal layer patterning the oxide to form an oxide semiconductor layer 4;

[0096] S105. Deposit a third metal layer on the second metal layer after the first patterning treatment, and pattern the third metal layer to form a patterned third metal layer;

[0097] S106. Deposit an anode material on the patterned th...

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Abstract

The invention discloses a thin film transistor device and a preparation method thereof. The thin film transistor device comprises an organic material layer; the projection of the organic material layer on a substrate covers an oxide semiconductor layer, and the organic material layer is configured to block light rays which are emitted from one side of the organic material layer and have the wavelength less than 470 nm, therefore, the defect that more oxygen vacancies are generated in a channel due to the fact that an oxide semiconductor layer in a thin film transistor device is illuminated by light with the wavelength less than 470 nm is overcome, negative shift of threshold voltage can be effectively prevented, and the stability of the device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a thin film transistor device and a preparation method thereof. Background technique [0002] TFT (Thin Film Transistor, Thin Film Transistor) device display is the mainstream display device on various notebook computers and desktops. Each liquid crystal pixel on this type of display is driven by a thin film transistor integrated behind the pixel. , so the TFT device display is also a type of active matrix liquid crystal display device. The TFT device display has the advantages of high responsiveness, high brightness, high contrast, etc., and its display effect is close to that of a CRT (Cathode Ray Tube, cathode ray tube) display. [0003] Existing TFT device display screens usually use oxide semiconductors (such as indium gallium zinc oxide) as the active layer in TFT devices. Using indium gallium zinc oxide as the active layer in TFT devices has many advantages,...

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Application Information

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IPC IPC(8): H01L29/786H01L21/34
CPCH01L29/7869H01L29/78633H01L29/66969
Inventor 肖守均李刘中袁山富林子平
Owner CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD