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Pellicle intermediate, pellicle, method for manufacturing pellicle intermediate, and method for manufacturing pellicle

A manufacturing method and an intermediate technology, which are applied in the direction of the original for photomechanical processing, the photoplate-making process of the pattern surface, gaseous chemical plating, etc., can solve the problem that the mask film is easy to be damaged, and achieve the effect of improving quality

Pending Publication Date: 2021-10-01
AIR WATER INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] In the technique of the following Patent Document 2, there is a problem that the mask film is easily damaged during wet etching of the silicon wafer.

Method used

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  • Pellicle intermediate, pellicle, method for manufacturing pellicle intermediate, and method for manufacturing pellicle
  • Pellicle intermediate, pellicle, method for manufacturing pellicle intermediate, and method for manufacturing pellicle
  • Pellicle intermediate, pellicle, method for manufacturing pellicle intermediate, and method for manufacturing pellicle

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Embodiment Construction

[0056] Hereinafter, an embodiment of the present invention will be described based on the drawings.

[0057] figure 1 It is a sectional view showing the structure of the mask 1 in one embodiment of the present invention. It should be noted, figure 1 This is a cross-sectional view taken on a plane perpendicular to the surface 40 a of the SiC film 40 .

[0058] refer to figure 1 The mask 1 (an example of a mask) in this embodiment is a SiC self-standing substrate in which a mask film made of SiC is partially supported by a support substrate, and includes a support substrate 41 and a SiC film 40 as a mask film ( An example of SiC film).

[0059] Support substrate 41 includes Si substrate 31 (an example of Si substrate), Si oxide film 32 (an example of Si oxide film), and Si layer 10 (an example of Si layer). Si substrate 31 , Si oxide film 32 , and Si layer 10 each have a ring-shaped planar shape when viewed from a direction perpendicular to surface 40 a of SiC film 40 .

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Abstract

Provided are a pellicle intermediate, a pellicle, a method for manufacturing the pellicle intermediate and a method for manufacturing the pellicle which are able to improve the quality of a pellicle film. The pellicle intermediate comprises an Si substrate; an Si oxide film formed on the surface of the Si substrate; and an Si layer formed on the surface of the Si oxide film. The Si layer includes a low-COP part in which the number of crystal originated particles (COP) decreases as it comes closer to the surface of the Si layer and which is formed in a portion that constitutes the surface of the Si layer.

Description

technical field [0001] The present invention relates to mask (pellicle) intermediate body, mask, the manufacturing method of mask intermediate body and the manufacturing method of mask, more specifically, relate to the mask intermediate body that can improve the quality of mask film, mask, A method for manufacturing a mask intermediate and a method for manufacturing a mask. Background technique [0002] In the photolithography technology used in the manufacturing process of semiconductor devices, a resist is applied to a semiconductor wafer, and a necessary part of the applied resist is irradiated with exposure light using a photomask, thereby forming a photoresist on the semiconductor wafer. A resist pattern of the necessary shape is formed on the wafer. [0003] In the manufacturing process of semiconductor devices, along with the miniaturization of semiconductor devices, the demand for miniaturization of photolithography technology is increasing. In recent years, as exp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/62
CPCG03F1/62C23C16/325C23C16/01G03F1/64
Inventor 奥秀彦三原慧秀一郎
Owner AIR WATER INC