Cylindrical transistor and manufacturing method thereof, semiconductor device and manufacturing method thereof

Abstract

The embodiment of the invention provides a cylindrical transistor and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof, and the manufacturing method of the cylindrical transistor comprises the steps: providing a wafer which is provided with a plurality of transistor forming regions, wherein each transistor forming region is provided with a transistor column, and each transistor column is provided with an exposed side wall; sequentially forming a gate oxide layer and a gate on the side wall of each transistor column; forming a source electrode at the first end of the transistor column; forming a drain electrode at the second end of the transistor column, wherein the first end and the second end are the two opposite ends of the transistor column in the first direction, and the first direction is the thickness direction of the wafer; and enabling the transistor column between the source electrode and the drain electrode to form a channel region of the transistor.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and relates to but not limited to a columnar transistor and its manufacturing method, a semiconductor device and its manufacturing method. Background technique [0002] Transistors are widely used as switching devices or driving devices in electronic equipment. For example, transistors can be used in Dynamic Random Access Memory (DRAM) to control the capacitance in each memory cell. [0003] In related technologies, transistors mainly include planar transistors and buried channel transistors. However, whether it is a planar transistor or a buried channel transistor, its source (Source, S) and drain (Drain, D) are located at the gate On the horizontal sides of (Gate, G), the source and drain occupy different positions under this structure, making the area of ​​the transistor larger. In addition, in the memory device, the source and drain of the transistor will be connected to di...

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Problems solved by technology

[0003] In related technologies, transistors mainly include planar transistors and buried channel transistors. However, whether it is a planar transistor or a buried channel transistor, its source (Source, S) and drain (Drain, D) are located at the gate On the horizontal sides of (Gate, G), the source and drain occupy different positions under this structure, making the area of ​​the transistor larger

In addition, in the memory device, the source and drain of the transistor will be connected to different structures after being formed. When the source and drain are located on the horizontal sides of the gate, it will easily lead to complicated circuit wiring inside the memory and difficult manufacturing process. Big

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