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Application of memristor with non-monotonically changing resistance state in collision prediction

A technology of changing resistance and memristor, applied in electrical components, manufacturing tools, manipulators, etc., can solve the problems of large sensing and computing systems, complex and efficient computing systems, and insufficient degrees of freedom, achieving good application prospects and easy operation. , the effect of low cost

Pending Publication Date: 2021-10-15
HEFEI INNOVATION RES INST BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide an application of a memristor with a non-monotonic changing resistance state in collision prediction. The memristor with a non-monotonic changing resistance state has electrical responsiveness to light intensity, and the transient Joule heat changes the geometric shape of CF to realize the dynamic regulation of the resistance state of the memristor, thereby successfully identifying the distance of the moving light source and predicting the upcoming collision behavior, effectively integrating the perception and processing of optical signals in a single In order to solve the problems of inefficiency caused by the overly complex computing system of existing mobile robots, the separation of perception and computing systems caused by the bulky size, and the lack of intelligent degrees of freedom, etc.

Method used

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  • Application of memristor with non-monotonically changing resistance state in collision prediction
  • Application of memristor with non-monotonically changing resistance state in collision prediction
  • Application of memristor with non-monotonically changing resistance state in collision prediction

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Embodiment 1

[0024] A method for preparing a memristor with a non-monotonic changing resistance state, the memristor has a vertical structure, and the schematic diagram of the structure is shown in figure 1 As shown, it includes a substrate 1, a bottom electrode 2, a dielectric layer 3 and a top electrode 4 arranged in sequence from bottom to top; in this embodiment, the substrate 1 is a glass sheet, the bottom electrode 2 is Ag, and the dielectric layer 3 is made of CsPbBr 3 and few-layer black phosphorus nanosheets (FLBP) as the heterojunction material containing perovskite quantum dots prepared by raw materials, the top electrode 4 is ITO; the memristor made in this embodiment is recorded as ITO / (CsPbBr 3 / FLBP) / Ag / glass substrate, the preparation steps are as follows:

[0025] Step 1 (cleaning): Put the glass piece into a beaker, add a few drops of Decon cleaning agent and an appropriate amount of ultrapure water, and ultrasonicate the beaker for 10 minutes. Take out the beaker and ad...

Embodiment 2

[0037] Referring to the preparation method of the memristor in Example 1, the difference between Example 2 and Example 1 is that the top electrode of the memristor prepared in Example 2 is Ag, and the bottom electrode is ITO, that is, the memristor prepared in Example 2 The memristor is denoted as Ag / (CsPbBr 3 / FLBP) / ITO / glass substrate. For the preparation method, refer to the process in Example 1, only step 4 and step 8 need to be replaced.

Embodiment 3

[0039] A method for preparing a memristor with a non-monotonic changing resistance state, the memristor has a horizontal structure, and the schematic diagram of the structure is shown in figure 2 As shown, it includes a substrate 1 at the bottom, a pair of horizontal electrodes 5 and a dielectric layer 3 are arranged on the top of the substrate 1; the dielectric layer is located between the two horizontal electrodes; the substrate 1 is SiO in this embodiment 2 / Si substrate, the horizontal electrode is composed of an alloy of Cr and Ag (recorded as Cr / Ag), and the dielectric layer 3 is the same as that in Example 1; the memristor made by this embodiment is denoted as (Cr / Ag) Ag) / (CsPbBr 3 / FLBP) / (Cr / Ag), its preparation steps are as follows:

[0040] With reference to step one to step seven in Example 1, the difference is that the following two points are different: (1) in step one of Example 2, SiO 2 / Si substrate replaces the glass plate that contains ITO electrode in emb...

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Abstract

The invention discloses an application of a memristor with a non-monotonic change resistance state in collision prediction. The material of a dielectric layer of the memristor is a dielectric material capable of being regulated and controlled by light. Under the stimulation of optical signals, the resistance state of the memristor presents non-monotonic change. The memristor has electrical responsiveness to light intensity, dynamic regulation and control of the resistance state of the memristor are achieved by changing the geometrical shape of the CF through transient Joule heat generated by illumination, and therefore the distance of a moving light source is recognized, and the impending collision behavior is predicted. Sensing and processing of optical signals are effectively integrated in a single memristor, and a series of problems caused by a complex computing system of an existing mobile robot are solved. Besides, the collision prediction method constructed based on the Joule thermal effect of the memristor has the advantages of low cost, high stability, simplicity in operation and the like, so that the collision prediction method has a good application prospect and can be widely applied to intelligent collision prediction of a mobile robot system.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, and in particular relates to the application of a memristor with non-monotonic changing resistance state in collision prediction. Background technique [0002] With the rapid development of robot technology, robots are gradually moving from traditional industrial fields to wider application scenarios, such as: home and public services, warehousing and logistics, space and military applications, etc. Autonomous driving is a key area of ​​development in locomotion tasks involving mobile robots over complex terrain. With the complexity of mobile robotic systems, the demand for computing power is increasing. Most current mobile robots are based on general intelligence systems with complex mathematical algorithms to predict collisions. However, the algorithms involved require iterative solutions, making them computationally extensive and thus energy and area inefficient, limiting the de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00B25J9/16
CPCB25J9/16B25J9/1676H10N70/257
Inventor 王燕吕子玉程厚义杜寅昌赵巍胜
Owner HEFEI INNOVATION RES INST BEIHANG UNIV
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