Electroplating clamp for compound semiconductor microwave chip

A microwave chip and electroplating fixture technology, applied in semiconductor devices, circuits, electrolysis processes, etc., can solve problems such as concentration of power lines, differences in metal ion concentration, defects in holes, etc. Effect
CN113512752APending Publication Date: 2021-10-19河北博威集成电路有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
河北博威集成电路有限公司
Publication Date
2021-10-19

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Abstract

The invention discloses an electroplating clamp for a compound semiconductor microwave chip, and relates to the technical field of electroplating. The electroplating clamp for the compound semiconductor microwave chip comprises a bottom plate, lifting devices are arranged on the two sides of the top of the bottom plate, a connecting rod is fixedly connected to one side of each lifting device, a transverse rod is fixedly connected to the bottom of each connecting rod, a clamp body is arranged in the middle of each transverse rod, each clamp body comprises a limiting frame, actuating rods are movably connected to the inner walls of the two ends of each limiting frame, clamping plates are fixedly connected to the ends of the actuating rods, and the ends of the reset springs are fixedly connected to the sides of the clamping plates. Through arrangement of limiting pieces and the clamp bodies, chips can be immersed into an electrolyte through the lifting devices, during electroplating, for example, when an additive or a conductive material such as copper and the like is added into a hole, the limiting rods are used for limiting the limiting frames, thus the limiting frames are kept highly stable, and errors are reduced.
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Description

Technical field

[0001] The present invention relates to the field of electroplating technology, in particular for a compound semiconductor microwave chip electroplating fixture. Background technique

[0002] Conventional through-hole electroplating is made of silicon venting by electroplating, and the electroplating method is filling through holes thereof, and the process is simple, but for deep and relatively large through holes, it is true to achieve Defect filling is not easy, the main problems are: a centralized phenomenon at the power line at the mouth; there is a difference in metal ion concentration of the aperture and the void. Therefore, during the electroplating process, the conductive material such as metal copper is difficult to deposit in the bottom, which is easy to cause premature sealing of the through hole, causing the intake defect.

[0003] 5G microwave chip is the weight of the current chip development industry, 5G microwave chip requires high intensity than t...

Claims

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