Method and device for detecting leakage rate of treatment chamber
A processing chamber and leakage rate technology, which is applied in the field of detection of the leakage rate of the processing chamber, can solve the problems of high scrap rate and affect the substrate output, and achieve the effect of reducing the scrap rate
Pending Publication Date: 2021-10-22
CHANGXIN MEMORY TECH INC
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Problems solved by technology
[0004] It can be seen that the above scheme needs to stop the production of substrates, which will affect the output of substrates
In addition, if air enters the processing chamber between adjacent two inspections, the substrates produced between adjacent two inspections are all scrapped, resulting in a high scrap rate
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[0068] Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numerals in different drawings refer to the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the embodiments of the present application. Rather, they are merely examples of apparatus and methods consistent with aspects of the embodiments of the present application as recited in the appended claims.
[0069] The embodiments of the present application are applied to the application scenario of substrate production by semiconductor equipment, and are specifically used to check the leak rate of the processing chamber in the semiconductor equipment to ensure the sealing of the processing chamber.
[0070] Wherein, the processing chamber is used f...
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The embodiment of the invention provides a method and device for detecting the leakage rate of a treatment chamber. The method comprises the steps of: processing a substrate fixed on an electrostatic chuck in a treatment chamber, and releasing the charges between the electrostatic chuck and the substrate through argon plasma; in the charge releasing process, obtaining the emission spectrum of the functional group in the treatment chamber in real time, the emission spectrum being used for determining the relation between the wavelength and the intensity of the functional group; determining first intensity having a wavelength between 640 nm and 660 nm and second intensity having a wavelength between 490 nm and 510 nm according to the emission spectrum; and calculating the ratio of the first intensity to the second intensity, and detecting the leak rate of the treatment chamber. The charge release is an indispensable step in the substrate production process, so that the production of the substrate does not need to be stopped, and the yield of the substrate is not influenced. In addition, when it is detected that the leakage rate of one substrate is abnormal, the next substrate can be prevented from continuing to be produced, and the rejection rate of the substrate can be reduced.
Description
technical field [0001] Embodiments of the present application relate to semiconductor manufacturing technology, and in particular to a method and device for detecting a leak rate of a processing chamber. Background technique [0002] A semiconductor device may include a processing chamber, and the substrate needs to undergo a series of treatments in the processing chamber. In the long-term production process of semiconductor equipment, a large amount of corrosive gas, high temperature, ultra-low pressure and other production conditions will cause the sealing performance of sealing rings, quartz and other components in the processing chamber to fail. As a result, air enters the processing chamber, which changes the production conditions in the processing chamber, and further leads to the scrapping of the produced substrates. [0003] In the prior art, the method for detecting whether air enters the processing chamber is performed offline, that is, the detection needs to be p...
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Login to View More IPC IPC(8): H01L21/67
CPCH01L21/67242
Inventor 李想
Owner CHANGXIN MEMORY TECH INC