Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor structure and forming method thereof

A semiconductor and gas technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problem that the performance of semiconductor devices needs to be improved, and achieve improved contact resistance, good performance, and improved adhesion. Effect

Pending Publication Date: 2021-10-22
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the performance of semiconductor devices formed by existing technologies needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] As mentioned in the background, semiconductor structures have poor performance.

[0038] The following detailed description will be given in conjunction with the accompanying drawings, the reasons for the poor performance of the semiconductor structure, Figure 1 to Figure 5 It is a schematic structural diagram of each step of a method for forming a structure of a semiconductor structure.

[0039] Please refer to figure 1 , a substrate 100 is provided, the substrate 100 has a first conductive layer 110, the substrate 100 exposes the surface of the first conductive layer 110, the substrate 100 has a dielectric layer 120 on the surface, and the dielectric layer 120 has openings 130, And the opening 130 exposes the surface of the first conductive layer 110 .

[0040] Please refer to figure 2 , a second conductive layer 140 is formed in the opening 130 , and the top surface of the second conductive layer 140 is lower than the top surface of the dielectric layer 120 .

...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a semiconductor structure and a forming method thereof. The method comprises the following steps that: a first conductive layer is provided; a dielectric layer is formed on the first conductive layer, an opening is formed in the dielectric layer, and the opening exposes the surface of the first conductive layer; a second conductive layer is formed in the opening, wherein the top surface of the second conductive layer is flush with or lower than the top surface of the dielectric layer; and a gap layer is formed on the surface of the side wall of the opening, wherein the gap layer is located between the dielectric layer and the second conductive layer. The semiconductor structure formed by the method is good in performance.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular, to a semiconductor structure and a method for forming the same. Background technique [0002] With the rapid development of integrated circuit manufacturing technology, the size of semiconductor devices in the integrated circuit is continuously reduced, so that the operation speed of the entire integrated circuit can be effectively improved. As the size requirements of components are getting smaller and smaller, the size of the correspondingly formed conductive structures is getting smaller and smaller. [0003] The method for forming the conductive structure is as follows: providing a semiconductor substrate; forming a first dielectric layer on the semiconductor substrate, the first dielectric layer having a first opening; forming a first plug in the first opening; After forming the first plug, a second dielectric layer is formed on the surface of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/528H01L21/768
CPCH01L21/76831H01L21/76847H01L23/5283H01L23/5286
Inventor 成国良张浩郭雯段超许增升
Owner SEMICON MFG INT (SHANGHAI) CORP