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LED semiconductor device based on graphene material technology to achieve circulating heat dissipation effect

A technology of circulating heat dissipation and graphene, which is applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve the problems of affecting normal walking, large light source components, and increased space occupied by light source components, so as to improve heat dissipation efficiency and improve The effect of utilization

Active Publication Date: 2021-11-23
NANTONG ZHONGTIE HUAYU ELECTRICS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the prior art, in order to increase the access area with the hot gas, multiple graphene substrates are installed to increase the contact area between the hot gas and the graphene substrate. The installation of multiple graphene substrates will undoubtedly increase the space occupied by the light source component. , and the light source components using this high heat dissipation structure have relatively strict volume requirements. For example, in operating rooms and mines, there are many staff in the room during the operation. If the light source components occupy a large volume, it will affect the staff Body communication between people, and the mine is inherently narrow, if the light source components occupy a large volume, it will affect normal walking

Method used

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  • LED semiconductor device based on graphene material technology to achieve circulating heat dissipation effect
  • LED semiconductor device based on graphene material technology to achieve circulating heat dissipation effect
  • LED semiconductor device based on graphene material technology to achieve circulating heat dissipation effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] see Figure 1-4 , the inner plate 230 is set in the cavity, please refer to Figure 5 As shown, the inner plate 230 has an arc-shaped structure, and the bottom end is connected to the inner wall of the outer plate 210 near the flow hole 240. At this time, an inlet cavity 211 is formed at the bottom of the outer plate 210, and a squeeze is formed between the inner plate 230 and the inner wall of the outer plate 210. The pressure cavity 212 and the circulation cavity 213 are formed in the inner plate 230, and the graphene structure is arranged in the inner plate 230 to form an integral structure with it. In this way, when in use, the LED semiconductor device works to generate hot gas. First, the density of the hot gas decreases due to expansion. As a result, it moves upwards into the entry cavity 211, and then enters the extrusion cavity 212 from the entry cavity 211. At this time, the distance between the inner plate 230 and the outer plate 210 gradually decreases to slo...

Embodiment 2

[0034] see Image 6 As shown, an inner column 2131 is set in the circulation chamber 213, specifically at the center of the inner plate 230. The inner column 2131 is fixedly connected to the inner wall of the side plate 220. When in use, the hot gas in the squeeze chamber 212 decelerates and enters the circulation chamber 213 directly. and flow around the inner column 2131, the graphene structure is set in the inner column 2131 and forms an integral structure with it, so that the hot air dissipates heat when it surrounds the inner column 2131, thereby improving the heat dissipation intensity in the inner column 2131 , and then discharged through the flow holes 240 after heat dissipation.

Embodiment 3

[0036] see Figure 7 As shown, a plurality of guide columns 2132 are arranged in the circulation cavity 213, and the guide columns 2132 are arranged in a spiral shape in the circulation cavity 213. The graphene structure is arranged in the flow guide columns 2132 and forms an integral structure with them. When in use, the hot gas After entering the circulation chamber 213, the diversion pillars 2132 are dispersed in the circulation chamber 213 and circulated in a spiral shape, which not only increases the contact area between the hot gas and the diversion pillars 2132, but also delays its circulation time in the circulation chamber 213, Further ensure the effect of heat dissipation.

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Abstract

The invention relates to a semiconductor device, in particular to an LED semiconductor device based on graphene material technology to realize the effect of circulating heat dissipation. It includes a device body, the device body includes an LED base and a top plate set on the top of the LED base, a connecting frame is set between the LED base and the top plate, an outer shell is set outside the LED base and the top plate, and the LED semiconductor is set on the LED base. The bottom of the seat, and the device body also includes a circulation heat absorbing device. In the present invention, the deceleration cycle is used to improve the heat dissipation efficiency of the hot gas, to ensure that the hot gas is discharged from the flow hole after sufficient heat dissipation, and the utilization rate of the graphene structure can be improved after the cycle, and the volume occupied by the graphene structure due to the large number of layers is solved. big question.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to an LED semiconductor device based on graphene material technology to realize the effect of circulating heat dissipation. Background technique [0002] Chinese patent publication number: CN208652335U discloses a graphene heat sink structure of a high-voltage LED downlight, including a lamp front shell, a lamp rear cover, and an LED light source assembly template. The interior of the lamp rear cover is fixedly connected with a partition, and the LED The light source assembly template is installed above the partition, and a graphene substrate is arranged between the LED light source assembly template and the partition. [0003] However, in the prior art, in order to increase the access area with the hot gas, multiple graphene substrates are installed to increase the contact area between the hot gas and the graphene substrate. The installation of multiple graphene substrates will undoubtedly...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/64H01L25/075
CPCH01L33/642H01L33/641H01L33/644H01L25/075
Inventor 何小峰陈建锋张正亚环树建许鹏程
Owner NANTONG ZHONGTIE HUAYU ELECTRICS