Interference filter film and its preparation method and light-emitting device

Abstract

The present invention relates to an interference filter film, a preparation method thereof and a light-emitting device, comprising the following steps: sequentially forming laminated and alternate high-refractive-index material films and low-refractive-index material films on a substrate; The inner layer film is the first layer of high refractive index material film, the first layer of high refractive index material film is deposited by thermal atomic layer infiltration process, the deposition step of the first layer of high refractive index material film includes sequentially infiltrating the precursor into The precursor infiltration stage of the substrate and the atomic layer deposition stage of depositing and forming the first layer of high refractive index material film; except for the first layer of film, the deposition process of each other film is independently selected from the atomic layer deposition process or PEALD process; The deposition temperature of each high refractive index material thin film and each low refractive index material thin film is not greater than 110°C. The preparation method of the invention can effectively avoid the problem of failure of the light-emitting device caused by the film-making process, and the prepared interference filter film has better filtering and anti-reflection properties.

Description

Interference filter film and preparation method thereof and light-emitting device technical field The present invention relates to the technical field of light-emitting devices, in particular to a kind of interference filter film and preparation method thereof and light-emitting device. Background technique Light-emitting devices such as organic light-emitting devices have the advantages of simultaneous self-luminescence, high luminous efficiency, wide viewing angle, low power consumption, Bending and other excellent characteristics, the application in the display field has unique advantages. However, the internal structure of the light-emitting device contains Materials that are sensitive to water and oxygen are easily corroded by water and oxygen in the air, so light-emitting devices are easily corroded by water and oxygen, resulting in loss of performance. effect. Therefore, it is necessary to effectively encapsulate the light-emitting device to prolong its ligh...

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Problems solved by technology

However, physical methods such as spin coating, evaporation or sputtering are not suitable for deposition and film formation on the surface of light-emitting devices due to low film adhesion or lack of surface control.

At the same time, the traditional chemical vapor deposition CVD needs to strictly control the diffusion of precursors and the temperature uniformity of the reaction chamber, which is difficult to meet the requirements of film uniformity and precise controllable film thickness.

In addition, the functional layer materials in light-emitting devices, especially organic light-emitting devices, are not resistant to high temperature and have poor adhesion to the interference filter film, which easily leads to the failure of light-emitting devices

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