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Method for producing polycrystalline silicon

A technology of polysilicon and silane, applied in the field of preparing polysilicon

Pending Publication Date: 2021-10-22
WACKER CHEM GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Although the risk of dust deposition can in principle be minimized by optimized process management, dust deposition continues to occur

Method used

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  • Method for producing polycrystalline silicon
  • Method for producing polycrystalline silicon
  • Method for producing polycrystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0059] image 3 What israined in the measured support temperature θ MThe exposure time T of the black and white camera in front of the time T is in front of the time t (the deposition time) is exposed relative to the T (deposition time) exposure time T of the black and white camera arranged in front of the Siemens reactor. B Curve. The resulting curve begins at a deposition time of 60 hours.

[0060] The Siemens reactor is equipped with 24 rods, and the type of reactor is in principle becomes insignificant to the performance of the present invention. In the polysilicon rod (the height of the rod between the bridge and the electrode) is performed, θ is performed in front of the observation mirror. M OK. Data from high temperature gauges are transmitted to the process control station and draw. The black and white camera is provided with a CMOS sensor, and the same is substantially in the height of the rod toward the reaction space. The camera continuously produces an image, and the ...

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PUM

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Abstract

The invention relates to a method for producing polycrystalline silicon. The method comprises introducing a reaction gas, which contains silane and / or at least one halogen silane in addition to hydrogen, into a reaction chamber of a vapor deposition reactor, wherein the reaction chamber comprises at least one heated substrate on which silicon is deposited, and therefore, the polycrystalline silicon is formed. During deposition, the cloudiness in the reaction chamber is determined by at least one measuring device in order to detect the dust collection.

Description

Technical field [0001] The present invention relates to a method for preparing polysilicon in a vapor deposition reactor, wherein in order to avoid dust deposition, at least one measuring device determines the turbidity of the reactor in the reactor during deposition process. Background technique [0002] Polysilicon (Polysilicon) is used as a starting material, for example, by a single crystal (single crystal) silicon (single crystal) silicon (single crystal) silicon, by region melt (floating zone method). In the semiconductor industry, single crystal silicon is used to manufacture electronic components (chips). [0003] Further requires polysilicon for preparing polycrystalline silicon, such as by a block casting. The polysilicon obtained in the form of a block can be used to make a solar cell. [0004] Polysilicon can be obtained, for example, by Siemens method (chemical vapor deposition method). This includes reactive gas comprising silicon-containing components and hydrogen ...

Claims

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Application Information

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IPC IPC(8): C01B33/035B01J8/42C01B33/029C01B33/03
CPCC01B33/035B01J2208/00017B01J2219/00162B01J2219/00164B01J2219/00186B01J8/42B01J19/0013
Inventor 于尔根·沃尔夫马库斯·文蔡斯
Owner WACKER CHEM GMBH