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Chip structure compatible with semiconductor integrated circuit cmos process and its preparation method

A technology of integrated circuit and chip structure, which is applied in the field of chip structure and its preparation, can solve the problem of low sensitivity of infrared light intensity sensing, achieve the effects of mass production, increase sensitivity, and simplify the preparation process

Active Publication Date: 2021-12-28
西安中科立德红外科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the sensitivity of the above-mentioned technical solution to infrared light intensity sensing is not high

Method used

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  • Chip structure compatible with semiconductor integrated circuit cmos process and its preparation method
  • Chip structure compatible with semiconductor integrated circuit cmos process and its preparation method
  • Chip structure compatible with semiconductor integrated circuit cmos process and its preparation method

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Comparison scheme
Effect test

Embodiment 1

[0075] refer to Figure 1-Figure 8As shown, a possible embodiment of the present invention provides a chip structure compatible with the semiconductor integrated circuit CMOS process, including a substrate 100 , a circuit processing module 110 , a micro-bridge structure 300 and a suspension electrode group 500 . A circuit processing module 110 is disposed on the substrate 100 . The micro-bridge structure 300 is spaced apart from the substrate 100 through a support, and the micro-bridge structure 300 includes an infrared absorbing layer 330 and a metal electrode layer 360 . The suspended electrode set 500 is disposed between the substrate 100 and the micro-bridge structure 300 , and the suspended electrode set 500 is spaced apart from the substrate 100 . The suspension electrode group 500 includes a first suspension electrode 510 and a third suspension electrode 530 , both of the first suspension electrode 510 and the third suspension electrode 530 extend along a first directi...

Embodiment 2

[0114] refer to Figure 10-Figure 12 As shown, on the basis of Embodiment 1, another possible embodiment of the present invention provides a chip structure compatible with the semiconductor integrated circuit CMOS process, the difference is:

[0115]The suspension electrode group 500 also includes a second suspension electrode 520, which is arranged parallel to the first suspension electrode 510. The second suspension electrode 520 is used as a second gate electrode, and is symmetrically arranged on the third suspension electrode 510. opposite sides of the electrode 530. The metal electrode layer 360 also includes a second metal electrode 362 , the second metal electrode 362 is electrically connected to the second suspension electrode 520 via the second deformable beam 521 , and the second metal electrode 362 is connected to the second set connection end of the circuit processing module 110 Electrical connection; the second deformable beam 521 is heated and deformed, and the ...

Embodiment 3

[0119] refer to Figure 13 As shown, on the basis of Embodiment 1, another possible embodiment of the present invention provides a chip structure compatible with the semiconductor integrated circuit CMOS process, the difference is:

[0120] In the plurality of suspension electrode groups 500, the directions of deformation of the first deformable beam 511 and the third deformation beam 531 in each group are close to each other; among the multiple suspension electrode groups 500, the first suspension electrode 510 and the third suspension The distances between the electrodes 530 are different from each other; the circuit processing module 110 is provided with a binary conversion circuit module.

[0121] It is set that the two pendant electrodes in the pendant electrode group 500 are moved close to each other, and the distance between the two pendant electrodes in the same group is different. When absorbing the set heat, the two pendant electrodes with a relatively small distanc...

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Abstract

The invention provides a chip structure compatible with the semiconductor integrated circuit CMOS process and a preparation method thereof. The chip structure compatible with the semiconductor integrated circuit CMOS process includes a substrate, a circuit processing module, a micro-bridge structure and a suspension electrode group; the suspension electrode group includes The first and third pendant electrodes are arranged at intervals, the first and third pendant electrodes extend along a first direction, the first direction is perpendicular to the micro-bridge structure, and the third pendant electrode includes a channel layer, a source electrode and The drain electrode, the source electrode and the drain electrode are located on opposite sides of the channel layer along the first direction, and the first overhang electrode serves as the first gate electrode and is arranged opposite to the channel layer. The invention forms an air-gap transistor in the chip to improve the sensitivity to infrared light intensity sensing.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a chip structure compatible with semiconductor integrated circuit CMOS technology and a preparation method thereof. Background technique [0002] Infrared detector is a kind of heat detector. Its principle is to use microstructure to absorb infrared rays radiated by external objects, and generate changes in resistance, voltage and other signals, and then use the readout circuit to amplify the signals to obtain infrared signals radiated by external objects. Strong and weak detection. [0003] In the related technology, the infrared sensitive structure absorbs infrared light to generate thermal stress and cause deformation, which changes the capacitance between the two plates. The resonant circuit of the standard CMOS (Complementary Metal Oxide Semiconductor) circuit is used to detect the resistance and capacitance. The signal of the change, thereby generating the hybrid im...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J5/20G01J1/42H01L31/18H01L31/113
CPCG01J5/20G01J1/42H01L31/18H01L31/1136Y02P70/50
Inventor 刘伟马仁旺王鹏郭得福欧秦伟
Owner 西安中科立德红外科技有限公司