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Piezoelectric micromechanical ultrasonic transducer, array chip and manufacturing method

A technology for ultrasonic transducers and manufacturing methods, which is applied in directions such as fluids utilizing vibrations, can solve problems affecting PMUT array uniformity, operating frequency, adverse effects of power consumption, and increased parasitic effects of resistors and capacitors, so as to reduce chip size, The effect of improving product performance and reducing parasitic resistance

Active Publication Date: 2021-10-29
NANJING SHENGXI XINYING TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The chip area occupied by the metal wiring is much larger than the chip area occupied by the PMUT array, which is extremely uneconomical
At the same time, the longer metal wiring length increases the parasitic effect of resistors and capacitors, which has a negative impact on the operating frequency and power consumption of the PMUT array.
The uneven length of the wiring will also directly affect the uniformity of the work of the PMUT array

Method used

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  • Piezoelectric micromechanical ultrasonic transducer, array chip and manufacturing method
  • Piezoelectric micromechanical ultrasonic transducer, array chip and manufacturing method
  • Piezoelectric micromechanical ultrasonic transducer, array chip and manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] Such as figure 2 As shown, this embodiment provides a piezoelectric micromachined ultrasonic transducer suitable for high-density integration, which includes a silicon substrate 161, a substrate material 160, an oxide layer 132, a mechanical layer 130, and a lower metal layer from bottom to top. 112 , a piezoelectric material layer 115 and an upper metal layer 114 . The substrate material 160 is arranged with a cavity 120 , a first-layer metal wiring 201 , and a second-layer metal wiring 202 . Wherein, the first layer metal wiring 201 is connected to the front surface of the silicon substrate 161 . The second-layer metal wiring 202 is located above the first-layer metal wiring 201 . The first-layer metal wiring 201 is vertically interconnected with the second-layer metal wiring 202 through the metal lead hole 212 . The silicon substrate 161 is provided with TSVs 162 on the front and back sides of the silicon substrate 161 , and the TSVs 162 on the front and back side...

Embodiment 2

[0065] Such as image 3 As shown, this embodiment provides a piezoelectric micromachined ultrasonic transducer suitable for high-density integration, which is similar in structure to Embodiment 1, except that in this embodiment, the lower metal link hole ZBM 163-2 is used to realize the lower metal Layer 112 is vertically interconnected with second-level metal wiring 202 . The cross-sectional shape of the lower metal link hole ZBM 163-2 is also approximately Z-shaped, which is also a Z-shaped hole.

Embodiment 3

[0067] Such as Figure 4 As shown, this embodiment provides a piezoelectric micromachined ultrasonic transducer suitable for high-density integration, which adopts a double-unit structure and includes from bottom to top: a silicon substrate 161, a substrate material 160, an oxide layer 132, a mechanical layer 130 , lower metal layer 112 , piezoelectric material layer 115 and upper metal layer 114 . The substrate material 160 is arranged with two cavities 120, two first-layer metal wirings 201, two second-layer metal wirings 202, two cavities 120, two first-layer metal wirings 201, two second-layer The metal wirings 202 are respectively at the same level, and the two first-layer metal wirings 201 from the two PMUT units are respectively connected to the front side of the silicon substrate 161, and the two second-layer metal wirings 202 are respectively located above the two first-layer metal wirings 201, The two first-layer metal wirings ( 201 ) are vertically interconnected w...

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PUM

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Abstract

The invention discloses a piezoelectric micromechanical ultrasonic transducer, an array chip and a manufacturing method. The piezoelectric micro-mechanical ultrasonic transducer adopts a three-dimensional structure design, so that the chip size can be obviously reduced, parasitic resistance caused by metal wiring, power consumption related to capacitance, delay and nonuniformity are reduced at the same time, The piezoelectric micromechanical ultrasonic transducer has remarkable benefits of improving the product performance, reducing the cost, improving the yield and the like, and chip miniaturization and high-density integration can be achieved. The manufacturing process flow of the piezoelectric micromechanical ultrasonic transducer is compatible with a mainstream semiconductor technology and equipment, and the connecting line in the vertical direction is compatible with an existing chip BGA packaging technology, so that the piezoelectric micromechanical ultrasonic transducer has wide adaptability.

Description

technical field [0001] The present invention relates to a new 3D (3 dimensional three-dimensional) structure of a piezoelectric micromachined ultrasonic transducer (PMUT: Piezoelectric Micromachined Ultrasonic Transducers), and to a novel semiconductor micromachining technology for manufacturing a 3D PMUT. Meanwhile, as a direct application of PMUT, the present invention relates to electronic sensor arrays and related displays for medical imaging, fingerprint recognition, touch screen or gesture recognition, all of which require the use of high-performance, high-resolution PMUTs. Background technique [0002] Ultrasonic diagnostic instrument, through its ultrasonic probe, emits ultrasonic waves to the human body, and uses various information generated by the reflection, refraction, and diffraction of sound during the propagation process of human organs and tissues to receive, amplify, and transmit information. processed to form an image or flow Doppler and finally displayed ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B06B1/06
CPCB06B1/0662B06B2201/56
Inventor 李晖尹峰
Owner NANJING SHENGXI XINYING TECH CO LTD