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Waveguide interlayer coupling structure and preparation method thereof

A technology of coupling structure and waveguide layer, which is applied in the field of waveguide interlayer coupling structure and its preparation, can solve the problem of large interlayer coupling loss and achieve the effect of reducing interlayer crosstalk

Pending Publication Date: 2021-10-29
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a waveguide interlayer coupling structure and its preparation method, which is used to solve the technical problem of large interlayer coupling loss in the existing coupling structure

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  • Waveguide interlayer coupling structure and preparation method thereof
  • Waveguide interlayer coupling structure and preparation method thereof

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[0025] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0026] It should be noted that when an element is referred to as being “fixed” or “disposed on” another element, it may be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0027] In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indic...

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Abstract

The invention discloses a waveguide interlayer coupling structure and a preparation method thereof, relates to the technical field of silicon optical devices, and aims to solve the technical problem that an existing coupling structure is high in interlayer coupling loss. The waveguide interlayer coupling structure comprises: a substrate. a first waveguide formed on the substrate, wherein a first waveguide is located in the first area of the substrate; a first dielectric layer which is formed on the substrate and covers the first waveguide; and a second waveguide formed on the first dielectric layer, wherein the second waveguide is located in the second area of the substrate, and the projection of the first waveguide on the substrate and the projection of the second waveguide on the substrate have an overlapped area, so that light emitted from the second waveguide enters the first waveguide in a coupling manner. The end, close to the first waveguide, of the second waveguide is provided with a step-shaped structure, and the thicknesses of steps in the step-shaped structure are sequentially increased in the direction from the first waveguide to the second waveguide.

Description

technical field [0001] The invention relates to the technical field of silicon optical devices, in particular to a waveguide interlayer coupling structure and a preparation method thereof. Background technique [0002] Silicon material has great benefits as a substrate material for photonic integrated chips, such as being compatible with CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) process, which can reduce mass production costs, and at the same time contribute to the integration of optoelectronics with electronic chips. fusion. However, with the continuous expansion of application fields, the requirements for photonic devices are becoming more and more complex. It is no longer possible to simply prepare SOI waveguide devices with complex functions on SOI (Silicon-On-Insulator, silicon on insulating substrate) substrates. Meet the needs of future development. [0003] In order to further improve the performance of photonic integra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/26G02B6/293
CPCG02B6/26G02B6/29331
Inventor 李彬李志华谢玲李东浩唐波张鹏杨妍刘若男
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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