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Photoresist stripping liquid and stripping process

A stripping solution and photoresist technology, applied in the field of electronic chemicals, can solve the problems of substrate surface residue, wire short circuit, affecting the yield of liquid crystal panel finished products, etc., to achieve the effect of improving yield, eliminating bulging and improving water washability

Pending Publication Date: 2021-11-02
JIANGYIN JIANGHUA MICROELECTRONICS MATERIAL +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The following technical problems exist in actual production: there are residues on the substrate surface after stripping liquid treatment, especially on the copper surface
In the subsequent PI coating high-temperature process, some residual substances volatilize to form bulges. After further coating treatment, the bulges are enlarged. After etching again, adjacent wires are easily connected to cause short circuits, which affects the yield of liquid crystal panels.

Method used

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  • Photoresist stripping liquid and stripping process
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  • Photoresist stripping liquid and stripping process

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0036] Preparation of sample substrate: sputter molybdenum-niobium layer on a 2.9m*3.3m glass substrate by vapor deposition and copper layer (thickness ), the photoresist is coated on the surface of the copper layer, the thickness of the photoresist is 1.5 μm, after exposure and wet etching in sequence, the photoresist on the surface of the substrate is peeled off with a stripping solution.

[0037] Photoresist stripping process of stripping liquid: spraying time 120s, substrate conveying speed of stripping unit: 4500mm / min; flow rate of stripping liquid 470L / min, stripping liquid process temperature 60°C;

[0038] Process parameters for substrate washing and air knife treatment after stripping: the substrate transfer speed is the same as that of the stripping unit; normal temperature water is used for cleaning, and the water flow rate is 210L / min; the air knife pressure is 0.065Mpa, and the liquid knife process is 110L / min.

Embodiment

[0039] Embodiment (abbreviated as S, the same below)

[0040] 1. The stripping solution of Examples 1-9 and Comparative Example (abbreviated as D, the same below) 1 is configured according to the formula in the following table, and mixed evenly; in the following table 1:

[0041] A-alcohol amine compounds, ethanolamine A1, isopropanolamine A2;

[0042] B-alcohol ether compounds, diethylene glycol monomethyl ether B1, diethylene glycol monobutyl ether B2;

[0043] C-organic solvent, N-methylpyrrolidone C1

[0044] D-oligomer additives, polyethylene glycol 400D1, polyethylene glycol monomethyl ether (molecular weight 380-420) D2, monocarboxyl-terminated polyethylene glycol (PEG molecular weight 600) D3, double carboxyl polyethylene glycol ( PEG molecular weight 600) D4, carboxyl-terminated polyethylene glycol monomethyl ether (polyethylene glycol monomethyl ether molecular weight 600) D5;

[0045] E-copper protective agent, benzotriazole E1;

[0046] Table 1

[0047]

Embodiment 4

[0065] The alcohol ether in the photoresist stripping solution in Example 4 is diethylene glycol monomethyl ether. During water washing and air knife treatment, the foaming performance is low, and the residue on the substrate is reduced. Compared with Example 3, the average value of defective points is reduced;

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PUM

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Abstract

The invention discloses a photoresist stripping liquid. The photoresist stripping liquid mainly comprises an alcohol amine compound, an alcohol ether compound, an organic solvent and an oligomer additive, wherein the oligomer additive is one or a combination of more than one selected from polyethylene glycol and hydrophilic group-terminated polyethylene glycol, polyethylene glycol ether, polypropylene glycol and polypropylene glycol ether, and hydrophilic groups are amino or carboxyl groups. According to the invention, oligomer additive molecules in the photoresist stripping liquid are chain-shaped, the hydrophilic groups are uniformly distributed in the molecular chain, and the oligomer additive participates in modifying the short molecular chain of photoresist, so the water washing performance of the stripping liquid is improved, substrate residues are reduced, the defects of bumps, short circuits and the like are reduced or even eliminated, and the yield of liquid crystal panels is improved. The invention also discloses a stripping process based on the photoresist stripping liquid.

Description

technical field [0001] The invention relates to the technical field of electronic chemicals, in particular to a photoresist stripping solution and a stripping process. Background technique [0002] The photolithography process is a key process for making fine patterns, which includes processes such as coating, photoresist coating, development, etching, and photoresist stripping. Stripping is a technology that removes photoresist using chemical reaction or physical dissolution. Compared with water-based stripping fluid, organic stripping fluid has higher efficiency. [0003] The photoresist stripping solution for the production of high-generation liquid crystal panels contains alcohol ethers, organic amine compounds and organic solvents. The following technical problems exist in actual production: there are residues on the substrate surface after stripping liquid treatment, especially on the copper surface. In the subsequent PI coating high-temperature process, some residua...

Claims

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Application Information

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IPC IPC(8): G03F7/42
CPCG03F7/422
Inventor 陈林徐杨李茜茜李涛李登涛靳海仲邵勇殷福华浦陈龙朱永刚
Owner JIANGYIN JIANGHUA MICROELECTRONICS MATERIAL
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