In-memory logic circuit

Abstract

The invention provides an in-memory logic circuit. The in-memory logic circuit comprises a logic input unit, a reference comparison unit, a logic processing unit, a CMOS (Complementary Metal Oxide Semiconductor) transmission gate, a logic output transistor and a memory unit, the logic input unit includes a first NMOS transistor, a first logic input-transistor-first memory cell and a second logic input-transistor-first memory cell connected in parallel to a source terminal of the first NMOS transistor; the reference comparison unit comprises a second NMOS transistor, a first reference comparison transistor-memory unit and a second reference comparison transistor-memory unit; the drain ends of the first NMOS transistor and the second NMOS transistor are respectively connected with two input ends of the first current sensitive amplifier; the output end of the logic processing unit is connected with the control end of the CMOS transmission gate; the input end of the CMOS transmission gate receives a setting signal, and the output end of the CMOS transmission gate is connected with a logic output transistor and a memory unit.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a memory logic circuit. Background technique [0002] In-memory logic circuits are a novel architecture that solves the von Neumann bottleneck and memory wall problems in computers. In the prior art, memories that realize the functions of in-memory logic circuits can be divided into volatile memories and nonvolatile memories, wherein volatile memories, such as Static Random Access Memory (SRAM, Static Random Access Memory), Dynamic Random Access Memory Access memory (DRAM, Dynamic Random Access Memory); non-volatile memory, such as Resistive Random Access Memory (RRAM, Resistive Random Access Memory), Phase Change Random Access Memory (PCRAM, Phase Change Random Access Memory), Magnetic Random Access Memory (MRAM , Magnetoresistive Random AccessMemory). The in-memory logic circuit based on the non-volatile memory has the following advantages: 1. Non-volatile after the lo...

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Problems solved by technology

[0003] However, in-memory logic circuits based on non-volatile memory in the prior art often require a large number of auxiliary memory units and multiple cycles for memory writing, which makes the additional overhead of hardware resources too large and the working time slow

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