LDMOS device structure for improving transconductance
A device structure and gate structure technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of insufficient saturation current of devices and large depth of drift region, etc., to increase saturation current, improve transconductance, and ensure withstand voltage performance Effect
Pending Publication Date: 2021-11-02
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF11 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] The present application provides an LDMOS device structure with improved transconductance, which can solve the problem in the related art that the depth of the drift region is relatively large, so that the transconductance of the device is compressed, resulting in insufficient saturation current of the device
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0028] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
[0029] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to an LDMOS device structure for improving transconductance. The LDMOS device structure for improving transconductance comprises: a substrate layer, wherein a channel region and a drift region which are transversely adjacent are formed in the substrate layer, and the channel region and the drift region both extend downwards from the upper surface of the substrate layer; and a gate structure, which is bridged between the channel region and the drift region along the surface of the substrate layer, wherein a first end part and a second end part of the gate structure are respectively overlapped with the channel region and the drift region, a first drain end doped region is formed on one side far away from the channel region in the drift region, a first field oxide layer is formed at the drift region between the first drain end doped region and the second end part of the gate structure, the second end part is overlapped with the first field oxide layer, a source end doped region is formed in the channel region close to the first end part of the gate structure, and a voltage-withstanding improving region is formed in the substrate layer below the drift region and is in longitudinal contact with the drift region.
Description
technical field [0001] The present application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to an LDMOS device structure with improved transconductance. Background technique [0002] High-voltage LDMOS (Lateral Diffuse MOS) devices not only have the characteristics of high-voltage and high-current discrete devices, but also absorb the advantages of high-density intelligent logic control of low-voltage integrated circuits. The area is reduced, the cost is reduced, and the energy efficiency is improved, which is in line with the development direction of miniaturization, intelligence and low energy consumption of modern power electronic devices. [0003] In the related art, in order to improve the withstand voltage of the LDMOS device, a scheme of reducing the doping concentration of the epitaxial layer or increasing the length and depth of the drift region is adopted, so as to increase the breakdown voltage of the device and i...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06
CPCH01L29/7816H01L29/0619
Inventor 刘冬华蔡晓晴段文婷令海阳
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP