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Storage device and threshold voltage adjusting method and storage control method thereof

A storage device and threshold voltage technology, applied in the field of semiconductors, to achieve the effect of improving reliability

Inactive Publication Date: 2021-11-05
珠海博雅科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the process of performing MAC calculations, the GPU frequently accesses data from the memory (DRAM, SRAM), which causes most of the energy to be consumed in memory access, and its energy consumption is dozens or even hundreds of times higher than the implementation Energy consumed by logic circuits for MAC calculations

Method used

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  • Storage device and threshold voltage adjusting method and storage control method thereof
  • Storage device and threshold voltage adjusting method and storage control method thereof
  • Storage device and threshold voltage adjusting method and storage control method thereof

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Embodiment Construction

[0035] Various embodiments of the invention will be described in more detail below with reference to the accompanying drawings. In the various drawings, the same elements are denoted by the same or similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale.

[0036] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0037] figure 1 A schematic circuit structure diagram of a storage device for storing data according to the prior art is shown.

[0038] The memory device 100 includes a plurality of memory cells 10 arranged in an array, a bit line driver 101 , a word line driver 102 , and a selection line driver 103 . Each memory cell 10 includes a storage transistor M0 and a selection transistor M1 connected in series, wherein the source of the storage transistor M0 is connected to the drain of the selection t...

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Abstract

The invention discloses a storage device and a threshold voltage adjusting method and a storage control method thereof. The memory device includes: a plurality of memory cells arranged in an array and each including a memory transistor; multiple word lines, wherein the grid electrodes of the storage transistors of the same row of storage units are connected to the same word line of the multiple word lines; a plurality of bit lines, wherein the drain electrodes of the storage transistors of the same column of storage units are connected to the same bit line of the plurality of bit lines; a plurality of first connecting lines, wherein the shallow P well regions of the storage transistors of the same column of storage units are connected to the same first connecting line; and a plurality of second connecting lines, wherein the deep N well regions of the storage transistors of the same column of storage units are connected to the same second connecting line. According to the storage device, the device structure is optimized for in-memory calculation, the number of transistors of the storage unit can be reduced so as to reduce the chip size, and the threshold voltage of the storage transistors can be accurately adjusted so as to improve the calculation accuracy and reliability.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a storage device and a threshold voltage adjustment method and a storage control method thereof. Background technique [0002] The development of deep learning technology has greatly promoted the breakthrough development of artificial intelligence, bringing about an unprecedented wave of commercialization and globalization of artificial intelligence. Data, computing power, and algorithms are the three elements of AI-related industries. Machines rely on efficient model algorithms for massive data training, which requires high-performance computing power as support. Among them, computing power is usually based on chips, and mature computing power carriers such as CPU (Central Processing Unit, central processing unit), DSP (Digital Signal Processing, digital signal processing), GPU (Graphics Processing Unit, graphics processing unit). [0003] In the field of artifi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/34G11C16/14G11C16/12G11C5/14
Inventor 陈刚刘大海余作欢李健球李迪赵希军闫江
Owner 珠海博雅科技股份有限公司