Supercharge Your Innovation With Domain-Expert AI Agents!

Optical arrangement and lithography apparatus

A technology of optical devices and lithography equipment, applied in the field of optical devices and lithography equipment, can solve the problems of increasing capacitive interaction and disadvantages

Pending Publication Date: 2021-11-09
CARL ZEISS SMT GMBH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The production of facet mirrors as microsystems and the attendant effect of bringing components closer together further unfavorably increases the capacitive interaction

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Optical arrangement and lithography apparatus
  • Optical arrangement and lithography apparatus
  • Optical arrangement and lithography apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0082] Figure 1AA schematic diagram of an EUV lithographic apparatus 100A including a beam shaping and illumination system 102 and a projection system 104 is shown. In this case, EUV stands for "extreme ultraviolet," meaning the wavelengths of light at work are between 0.1 nanometers and 30 nanometers. The beam shaping and illumination system 102 and the projection system 104 are respectively arranged in vacuum enclosures (not shown), wherein each vacuum enclosure is evacuated by means of an evacuation device (not shown). The vacuum enclosure is surrounded by a machine room (not shown) in which drive means for mechanically moving or setting the optical elements are provided. In addition, electrical controllers and the like can also be set in the machine room.

[0083] The EUV lithographic apparatus 100A has a EUV radiation source 106A. A plasma source (or synchrotron) emitting radiation 108A in the EUV range (extreme ultraviolet range), that is to say for example in the wav...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
wavelengthaaaaaaaaaa
Login to View More

Abstract

An optical arrangement (200) for a lithography apparatus (100A, 100B) comprises a microsystem (202) having a mirror array (204), wherein a respective mirror (206) of the mirror array (204) is configured to reflect working light (108A, 108B) of the lithography apparatus (100A, 100B) at its front side (208) and reflect a measurement beam (L, 224) at its rear side (220), one or more radiation sources (226, 310) provided outside the microsystem (202) and configured to provide the respective measurement beam (L, 224), and one or more sensor units (230, 804, 1200) configured to detect a tilt angle (alpha) of a respective mirror (206) depending on the respectively reflected measurement beam (L', 224').

Description

technical field [0001] The invention relates to an optical device and a lithographic apparatus. [0002] Cross References to Related Applications [0003] The content of priority application DE 10 2019 204 165.5 is hereby incorporated by reference in its entirety. Background technique [0004] Microlithography is used to produce microstructured components, such as integrated circuits. A microlithographic process is performed using a lithographic apparatus having an illumination system and a projection system. In this case, the image of the mask (reticle) illuminated by means of an illumination system is projected by means of a projection system onto a substrate, for example coated with a photosensitive layer (photoresist) and arranged on The silicon wafer in the image plane of the projection system in order to transfer the mask structure onto the photosensitive coating of the substrate. [0005] In lithographic apparatuses designed for the EUV range (ie at wavelengths of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G02B26/08
CPCG03F7/70075G03F7/7085G02B26/0833G03F7/70116G01S17/32G02B5/0816
Inventor J.霍恩S.里赫特
Owner CARL ZEISS SMT GMBH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com