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Time-of-flight sensor row direction phase fixed mode noise elimination device and method

A technology with fixed phase and time-of-flight, applied to measuring devices, instruments, TVs, etc., to achieve the effect of improving the effect, eliminating FPPN in the row direction, and simple circuit structure

Active Publication Date: 2021-11-12
TIANJIN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current existing circuit structure only eliminates FPPN in the column direction. Therefore, the present invention designs a method for FPPN in the row direction to realize the elimination of FPPN in the row direction.

Method used

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  • Time-of-flight sensor row direction phase fixed mode noise elimination device and method
  • Time-of-flight sensor row direction phase fixed mode noise elimination device and method
  • Time-of-flight sensor row direction phase fixed mode noise elimination device and method

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Embodiment Construction

[0020] In order to enable the continuous wave modulation TOF three-dimensional image sensor to eliminate the row coordinate-related tilt distortion caused by the FPPN in the row direction, and to make up for the problem that the current FPPN circuit in the column direction cannot eliminate the FPPN in the row direction, the present invention proposes a method that can be applied to continuous wave modulation The row direction FPPN elimination circuit structure in the TOF three-dimensional image sensor, the circuit adds a pair of tri-state gates that enable the opposite, so that the integration signal can change the propagation direction on the row pixels, and the two integration signals in opposite directions pass through the pixel For the same time, the effects of pixels will be superimposed and have nothing to do with the row coordinates of pixels. The FPPN elimination circuit in the row direction can correct the oblique distortion in the row direction, thereby realizing a di...

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Abstract

The invention relates to the field of CMOS-TOF (Complementary Metal Oxide Semiconductor-Time of Flight) image sensor design, and provides a noise elimination method which can correct inclination distortion in a row direction so as to realize a distortionless three-dimensional imaging effect. Therefore, the technical scheme adopted by the invention is as follows: a three-state gate buffer is arranged at each of the uppermost part and the lowermost part of a pixel array, and the two three-state gate buffers have opposite level enable; the enabling of the two three-state gate buffers is controlled by the same global signal, so that at the same moment, only one three-state gate buffer is opened, the other three-state gate buffer is in a high-resistance state, and a global integral signal can be selected to enter from the upper part or the lower part of the array by controlling the enabling signal of the three-state gate buffer. The CMOS-TOF image sensor is mainly applied to design and manufacturing occasions of CMOS-TOF image sensors.

Description

technical field [0001] The invention relates to the field of CMOS-TOF image sensor design, in particular to the field of continuous wave modulation time-of-flight image sensor FPPN elimination method design field. Specifically, it relates to a noise elimination method for a time-of-flight sensor with a fixed-mode noise in the row direction. Background technique [0002] Compared with traditional image sensors, Time-of-Flight (TOF) image sensors use the propagation speed of light signals and the reflection of light to detect the flight time of light between the sensor and the measured object, and then calculate the distance between the measured object and the sensor. distance information. According to the measurement method, TOF sensors can be divided into direct TOF sensors and indirect TOF sensors. The direct TOF sensor uses a precise timing circuit to measure the time difference between the pulse emitted by the light source and the pulse received by the sensor to directl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/213H04N5/357G01S7/4865G01S7/487G01S17/32G01S17/894
CPCH04N5/213G01S7/487G01S7/4865G01S17/894G01S17/32H04N25/60
Inventor 聂凯明田冠高志远高静徐江涛
Owner TIANJIN UNIV
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