Silver thin film etching liquid composition, etching method using same, and metal pattern forming method

Abstract

The present invention relates to a silver thin film etching liquid composition, an etching method using the same, and a meta pattern forming method. The silver thin film etching liquid composition comprises: (A) nitric acid; (B) an alkyl sulfonic acid having 1 to 3 carbon atoms; (C) an organic acid other than an alkyl sulfonic acid having 1 to 3 carbon atoms; (D) sulfate; (E) an iron-containing ternary metal salt; and (F) water.

Description

technical field [0001] The present invention relates to a silver thin film etchant composition, an etching method using the composition and a method for forming a metal pattern. Background technique [0002] Flat panel display devices such as OLEDs tend to be rapidly applied to small display markets such as portable devices and also to large displays such as TVs in recent years because the devices themselves emit light and can be driven at low voltage. [0003] On the other hand, metal thin films containing aluminum (Al) have been used in the past for the wiring of OLEDs or LCDs, reflectors, and electrodes of color filters, but recently have begun to use metal films that have a lower density than metals such as aluminum. A silver (Ag: resistivity of about 1.59 μΩcm) film, a silver alloy, or a multilayer film including the same with higher resistivity and higher brightness. [0004] For example, wiring and / or patterns are formed by etching a silver film, a silver alloy, or a...

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Problems solved by technology

However, since the etchant disclosed in this patent document does not produce an etch stop (Etch Stop) phenomenon, there is a problem as follows: with the increase of the etching time (Etching Time), not only the side etch (Side Etch) continues to increase and wiring occurs In addition, when evaluating the number of treatments, a large amount of re-adsorption of silver is caused due to performance degradation

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