Process method for realizing cutting channel on back surface of thin wafer

Abstract

The invention provides a process method for realizing a cutting channel on the back surface of a slice wafer, and the method comprises the following steps: 1) providing the slice wafer with a through hole on the back surface; 2) forming a metal seed layer on the back surface of the thin wafer; 3) forming a photoresist layer on the back face of the thin wafer, and defining a cutting channel area through the photoetching technology, wherein the cutting channel area is covered with the photoresist layer, and the area outside the cutting channel area is exposed; 4) forming a metal layer on the back surface of the thin wafer, wherein the metal layer is at least formed in a region outside the cutting channel region; 5) stripping the photoresist layer covering the cutting channel region to expose the cutting channel region and form a back cutting channel; 6) cutting the sheet wafer from the cutting channel area. The problem that the metal layer in the cutting channel area is too thick and needs to be removed through a subsequent wet etching process is solved, the back face process can be effectively simplified, the manufacturing cost is saved, and the production yield is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor device manufacturing, in particular to a process method for realizing dicing lines on the back side of thin wafers. Background technique [0002] In the manufacturing process of semiconductor devices, in order to obtain better thermal conductivity, electrical properties, and the needs of subsequent device processing technology, the product sheet is generally thinned, generally thinned to less than 200 microns, called thin sheet. For some special semiconductor devices, in order to obtain thinner chips, or to meet the requirements of better performance, it is necessary to reduce the thickness of the substrate of the product chip to less than 100 microns, or even less than 50 microns, that is, it is processed into a so-called ultra-thin chip. Chips, and after thinning, backside through holes, backside metallization, chip scribing and other processing processes are required. [0003] Currently, thin wafe...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a process for realizing the dicing lines on the backside of a thin wafer, which is used to solve the problem of wet etching on the backside vias caused by the thicker metal layer in the dicing lines in the prior art. Loss of device yield due to metal undercutting near the top two corners of the hole, as well as low yield and high gold recovery costs during dicing

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