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Multi-component relaxor ferroelectric film material with superlattice structure and ultrahigh energy storage efficiency and preparation method of multi-component relaxor ferroelectric film material

A technology of ferroelectric thin film and energy storage efficiency, applied in circuits, capacitors, electrical components, etc., can solve the problems of poor energy storage density and energy storage efficiency, and achieve excellent energy storage density, energy storage efficiency, and energy storage performance Good and stable, the effect of energy storage performance improvement

Active Publication Date: 2021-11-23
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to improve the current problems of poor energy storage density and energy storage efficiency due to defects in the internal structure of dielectric energy storage materials, this application provides a multi-component relaxor ferroelectric with superlattice structure and ultra-high energy storage efficiency. Thin film material and its preparation method

Method used

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  • Multi-component relaxor ferroelectric film material with superlattice structure and ultrahigh energy storage efficiency and preparation method of multi-component relaxor ferroelectric film material
  • Multi-component relaxor ferroelectric film material with superlattice structure and ultrahigh energy storage efficiency and preparation method of multi-component relaxor ferroelectric film material
  • Multi-component relaxor ferroelectric film material with superlattice structure and ultrahigh energy storage efficiency and preparation method of multi-component relaxor ferroelectric film material

Examples

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Effect test

Embodiment 1

[0061] A multi-component relaxor ferroelectric thin film material with a superlattice structure and ultrahigh energy storage efficiency, comprising: a base layer, a bottom electrode layer formed on the base layer, and an actual functional layer formed on the bottom electrode layer, The actual functional layer is a superlattice structure formed by repeated multi-period superimposition of a multi-layer structure film with relaxor ferroelectricity grown on the bottom electrode layer. In this embodiment, the repetition period N=40.

[0062] Such as figure 1 As shown, the preparation method of the above-mentioned multi-component relaxation ferroelectric thin film material comprises the following steps:

[0063] (1) Select the base layer, the base layer is rigid SrTiO 3 (STO) substrate, the crystal plane orientation of the STO substrate is [100].

[0064] (2) Using a pulsed laser deposition system to deposit SrRuO on the STO substrate layer 3 The (SRO) layer is used as the bottom...

Embodiment 2

[0080] The difference from Example 1 is that the fixed number of rounds for bombarding the BTO target in step C is 240 rounds, the fixed number of rounds for bombarding the STO target in step D is 40 rounds, and the fixed number of rounds for bombarding the BFO target in step E is 20 rounds. The process of cycling steps C to E was repeated 50 times to obtain a BTO-STO-BFO multi-component relaxor ferroelectric thin film material with a repetition period of N=50.

Embodiment 3

[0082] The difference from Example 1 is that the fixed number of rounds for bombarding the BTO target in step C is 200 rounds, the fixed number of rounds for bombarding the STO target in step D is 33 rounds, and the fixed number of rounds for bombarding the BFO target in step E is 17 rounds. The process of cycling steps C to E was repeated 60 times to obtain a BTO-STO-BFO multi-component relaxor ferroelectric thin film material with a repetition period of N=60.

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Abstract

The invention discloses a multi-component relaxor ferroelectric film material with a superlattice structure and ultrahigh energy storage efficiency and a preparation method of the multi-component relaxor ferroelectric film material. The multi-component relaxor ferroelectric film material comprises a substrate layer, a bottom electrode layer formed on the substrate layer and an actual functional layer formed on the bottom electrode layer, wherein the actual functional layer is a multi-layer structure film which grows based on the bottom electrode layer and has relaxor ferroelectricity. The preparation method comprises the steps of selecting a rigid STO layer with the crystal face orientation of [100] as the substrate layer; generating an SRO layer on the STO substrate as a bottom electrode layer; and generating a BTO-STO-BFO multilayer structure on the SRO layer as an actual functional layer to obtain the multi-component relaxor ferroelectric film material. The multi-component relaxor ferroelectric film material is of a superlattice structure, has the advantages of being high in saturation polarization value, low in remanent polarization value and high in breakdown field strength, and meanwhile, has excellent energy storage density and energy storage efficiency.

Description

technical field [0001] The present application relates to the field of relaxor ferroelectric energy storage materials, more specifically, to a multi-component relaxor ferroelectric thin film material with a superlattice structure and ultrahigh energy storage efficiency and a preparation method thereof. Background technique [0002] In recent years, the development and research of energy storage equipment on dielectric energy storage materials has received more and more attention. The research content mainly focuses on three aspects: (1) the improvement of the energy storage performance of dielectric energy storage materials; (2) the dielectric energy storage materials. Construction of various new structures of energy storage materials; (3) Exploration of the internal structure or defects of dielectric energy storage materials. [0003] The research on dielectric energy storage materials mainly focuses on two types of antiferroelectric materials and relaxor ferroelectric mate...

Claims

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Application Information

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IPC IPC(8): H01G4/12H01G4/008H01G4/08H01G4/30
CPCH01G4/306H01G4/008H01G4/1227H01G4/1209H01G4/085Y02E60/13
Inventor 陈骞鑫钟高阔李江宇钟向丽黄明强王金斌任传来
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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