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Display substrate and preparation method thereof

A technology for display substrates and sacrificial layers, applied in electrical components, electrical solid-state devices, circuits, etc., can solve the problem of low yield of light-emitting diodes, and achieve the effects of reducing impact, reducing damage, and reducing dislocation density

Pending Publication Date: 2021-11-23
CHENGDU VISTAR OPTEOLECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the prior art, laser lift-off of the substrate is a necessary and critical link in the preparation of light-emitting diodes. However, the existing laser lift-off of the substrate has the problem of low yield of light-emitting diodes.

Method used

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  • Display substrate and preparation method thereof
  • Display substrate and preparation method thereof
  • Display substrate and preparation method thereof

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Embodiment Construction

[0022] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, various implementation modes of the present invention will be described in detail below in conjunction with the accompanying drawings. However, those of ordinary skill in the art can understand that, in each implementation manner of the present invention, many technical details are provided for readers to better understand the present application. However, even without these technical details and various changes and modifications based on the following implementation modes, the technical solution claimed in this application can also be realized.

[0023] The first embodiment of the present invention relates to a display substrate. The schematic structural diagram of the display substrate in this embodiment is as follows figure 1 As shown, it includes: a substrate 1; a GaN layer 3 on the substrate 1, a sacrificial layer 2 between the substrate 1 and th...

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Abstract

The embodiment of the invention relates to the technical field of semiconductors, and discloses a display substrate and a preparation method of the display substrate. The display substrate comprises a substrate, a GaN layer located on the substrate, and a sacrificial layer located between the substrate and the GaN layer, wherein the sacrificial layer is provided with a plurality of openings, the GaN layer fills the openings and is in contact with the substrate, the GaN layer covers the surface, which is away from the substrate, of the sacrificial layer, and the sacrificial layer is used for absorbing laser energy, so that the yield of a light-emitting diode when the substrate is stripped by laser is improved.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular to a display substrate and a method for preparing the display substrate. Background technique [0002] A light emitting diode (Light Emitting Diode, referred to as LED) is a semiconductor solid-state light-emitting device, which uses a semiconductor P-N junction as a light-emitting material, and can directly convert electrical energy into light energy. Among various semiconductor materials, III-V compound semiconductors represented by gallium nitride (GaN) have the advantages of good heat dissipation, ability to carry large currents, high luminous intensity, low power consumption, and long life, making light-emitting diodes In particular, high-brightness blue light-emitting diodes and white light-emitting diodes are widely used in general lighting, landscape lighting, display backlighting, and automotive lighting. [0003] In the prior art, laser li...

Claims

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Application Information

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IPC IPC(8): H01L27/15H01L33/00
CPCH01L33/0075H01L33/0066H01L33/0095H01L27/156
Inventor 崔霜王程功郭恩卿姜博夏继业董小彪
Owner CHENGDU VISTAR OPTEOLECTRONICS CO LTD
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