Crystal growing furnace based on power descent method and crystal growing method

Abstract

The invention discloses a crystal growing furnace based on a power descent method, which comprises a furnace body, a chassis is arranged at the bottom of the furnace body, a heater and a raw material crucible are arranged in the furnace body, the raw material crucible is arranged on a crucible base, the crucible base is arranged on the chassis, the chassis is connected with a vacuum device, an isolation sleeve is arranged in the middle of the raw material crucible, an annular growth space is formed between the interior of the raw material crucible and the outer wall of the isolation sleeve in a matched mode, one end of the heater is connected with a heating electrode, and the other end of the heater extends into the isolation sleeve and heats the annular growth space; the invention also discloses a growing method which is realized based on power drop control temperature. The heating effect is good, the preparation cost is low, large-scale production can be achieved, and the growth quality is guaranteed.

Description

technical field [0001] The invention relates to the technical field of crystal preparation, in particular to a crystal growth furnace and a crystal growth method based on a power drop method. Background technique [0002] Crystal growth is a process in which substances form crystals from gas, liquid or solid phases under specific physical and chemical conditions. Existing optical lenses can be prepared by crystal growth furnaces. [0003] The existing crystal growth furnaces are all based on the crucible lowering method or the pulling method for crystal growth. When matching the growth method, the growth furnace needs to be equipped with a lowering device or a pulling device. Due to the setting of the matching device, the heater in the growth furnace can only be set On the outer periphery of the crucible, as the diameter of the crucible increases, the heater is difficult to process, expensive, and easily damaged; and during the heating process, the heat loss of the heater is...

AI Technical Summary

Problems solved by technology

[0003] The existing crystal growth furnaces are all based on the crucible lowering method or the pulling method for crystal growth. When matching the growth method, the growth furnace needs to be equipped with a lowering device or a pulling device. Due to the setting of the matching device, the heater in the growth furnace can only be set On the outer periphery of the crucible, as the diameter of the crucible increases, the heater is difficult to process, expensive, and easily damaged; and during the heating process, the heat loss of the heater is huge, and the heating uniformity of the raw material in the middle of the crucible is also changed. Poor, resulting in the growth furnace can not meet the process requirements well, affecting the growth quality

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