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Junction termination structure comprising fusion resistor, and manufacturing method thereof

A junction termination and resistance technology, used in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as electric field concentration at the main junction, and achieve the effects of reducing electric field strength, increasing resistance, and high reliability

Pending Publication Date: 2021-11-26
南瑞联研半导体有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a junction termination structure including fusion resistors and its manufacturing method, which can solve the problem of electric field concentration at the main junction and improve the breakdown voltage of the chip

Method used

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  • Junction termination structure comprising fusion resistor, and manufacturing method thereof
  • Junction termination structure comprising fusion resistor, and manufacturing method thereof
  • Junction termination structure comprising fusion resistor, and manufacturing method thereof

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specific Embodiment approach

[0040] The present invention will be further described below in conjunction with the accompanying drawings. The following examples are only used to illustrate the technical solution of the present invention more clearly, but not to limit the protection scope of the present invention.

[0041] It should be noted that the terms "front", "rear", "left", "right", "upper" and "lower" used in the description of the present invention refer to the directions in the drawings, and the terms "inner", " "outside" refers to the direction toward or away from the geometric center of a specific component, respectively, and is for the convenience of describing the present invention rather than requiring that the present invention must be constructed and operated in a specific orientation, so it should not be construed as a limitation of the present invention.

[0042] Implementation column one

[0043] A junction termination structure comprising a fused resistor, comprising a substrate layer ...

Embodiment 2

[0075] Such as figure 1 As shown, it is a cross-sectional schematic diagram of a junction terminal structure including a fusion resistor finally obtained by the manufacturing method provided by the embodiment of the present invention. The junction termination structure includes:

[0076] substrate layer 1,

[0077] A main junction ring 2, located in the surface layer of the substrate layer 1, and arranged in a racetrack shape;

[0078] N field-limiting rings 3 are located in the surface layer of the substrate layer 1, and are arranged in a racetrack shape on the periphery of the main junction ring, wherein N>1;

[0079] A fusion resistance ring 4 is located in the surface layer of the substrate layer 1, and is arranged in a racetrack between the main junction ring 2 and the field limiting ring 3; the main junction ring 2, the fusion resistance ring 4 and the field limiting ring 3 are arranged in sequence from the inside to the outside ;

[0080] The first-type field oxide r...

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Abstract

The invention discloses a junction termination structure containing a fused resistor, and a manufacturing method thereof. The junction termination structure comprises a substrate layer (1), a main junction ring (2) and a fused resistor ring (4), the main junction ring (2) and the fused resistor ring (4) are both embedded in the surface layer of the substrate layer (1), the fused resistor ring (4) is adjacent to the main junction ring (2), and the main junction ring (2) and the fused resistor ring (4) are sequentially arranged in a runway shape from inside to outside; and the main junction ring (2) and the fused resistance ring (4) are not in contact with each other at a certain distance before the annealing junction pushing process, and the main junction ring (2) and the fused resistance ring (4) are diffused to the periphery and are in contact with each other after the annealing junction pushing process. According to the structure, the fused resistance ring is arranged between the main junction ring and the field limiting ring, the fused resistance ring is fused with the main junction ring after junction pushing, and the resistance at the edge of the main junction is increased to reduce electric field concentration.

Description

technical field [0001] The invention relates to a junction terminal structure including fusion resistors and a manufacturing method thereof, belonging to the technical field of power semiconductor devices. Background technique [0002] In semiconductor devices, in order to solve the problems of electric field concentration and low breakdown voltage caused by excessive curvature of the PN junction edge, junction termination technology emerged as the times require. Junction termination is to reduce the local electric field, improve surface breakdown voltage and reliability. One of the terminal technologies specially designed to make the actual breakdown voltage closer to the ideal value of the parallel plane junction. [0003] For high-voltage and high-current power semiconductor devices, taking IGBT devices as an example, during the turn-off process, a large number of excess holes stored in the N-drift region near the edge of the main junction will first gather to the P-type ...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/739H01L21/331
CPCH01L29/0619H01L29/7393H01L29/66325
Inventor 郑婷婷李宇柱王鑫董长城骆健
Owner 南瑞联研半导体有限责任公司
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