Check patentability & draft patents in minutes with Patsnap Eureka AI!

Li2o-al2o3-sio2-based crystallized glass

A technology of crystallized glass and B2O3, applied in the field of Li2O-Al2O3-SiO2 crystallized glass, can solve the problems of processing substrate size change, sealing material deformation, etc.

Pending Publication Date: 2021-11-26
NIPPON ELECTRIC GLASS CO LTD
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These steps are accompanied by heat treatment at about 200°C, so there is a possibility that the sealing material will be deformed and the dimensions of the processed substrate will change.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Li2o-al2o3-sio2-based crystallized glass
  • Li2o-al2o3-sio2-based crystallized glass
  • Li2o-al2o3-sio2-based crystallized glass

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0107] Hereinafter, the present invention will be described based on examples, but the present invention is not limited to the following examples. Tables 1 to 8 show examples (sample Nos. 1 to 16) of the present invention.

[0108] [Table 1]

[0109]

[0110] [Table 2]

[0111]

[0112] [table 3]

[0113]

[0114] [Table 4]

[0115]

[0116] [table 5]

[0117]

[0118] [Table 6]

[0119]

[0120] [Table 7]

[0121]

[0122] [Table 8]

[0123]

[0124] First, each raw material is mixed in the form of oxides, hydroxides, carbonates, nitrates, etc. so as to form glasses having the compositions described in Tables 1, 3, 5, and 7 to obtain glass batches . Put the obtained glass batch into a crucible containing platinum and rhodium, strengthened platinum crucible without rhodium, refractory crucible or quartz crucible, melt at 1600°C for 4-100 hours, then heat up to 1650-1680°C and melt for 0.5 ~ 20 hours, roll forming to a thickness of 5mm, heat tre...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
liquidus temperatureaaaaaaaaaa
transmittivityaaaaaaaaaa
Login to View More

Abstract

Provided is an Li2O-Al2O3-SiO2-based crystallized glass which is not readily broken and which has high transparency in the ultraviolet to infrared region. The Li2O-Al2O3-SiO2-based crystallized glass is characterized by a content, in percentages by mass, of 40 to 90% SiO2, 5 to 30% Al2O3, 1 to 10% Li2O, 0 to 20% SnO2, 0 to 5% ZrO2, 0 to 10% MgO, 0 to 10% P2O5, and 0 to 4% TiO2, and by the mass ratio Li2O / (MgO+CaO+SrO+BaO+Na2O+K2O) of 3 or less.

Description

technical field [0001] The present invention relates to Li 2 O-Al 2 o 3 - SiO 2 Department of crystallized glass. Background technique [0002] In recent years, miniaturization and weight reduction are required for portable electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance). Along with this, the mounting space of semiconductor chips used in these electronic devices is also severely limited, and high-density mounting of semiconductor chips has become a problem. Therefore, high-density mounting of semiconductor packages has been achieved by using a three-dimensional packaging technique, that is, stacking semiconductor chips and wiring connections between semiconductor chips. [0003] As described in Patent Document 1, the fan-out type wafer-level packaging (WLP) includes: molding a plurality of semiconductor chips with a resin sealing material to form a processing substrate, and then processing the substrate The pro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C03C10/12
CPCC03C1/004C03C3/083C03C3/097C03C10/0027C03B32/02C03C4/02C03C4/082C03C4/085C03C10/0054C03C2204/00
Inventor 横田裕基平野翔太郎东条真
Owner NIPPON ELECTRIC GLASS CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com