Infrared detector pixel and infrared detector based on CMOS process

Abstract

The invention relates to an infrared detector pixel and an infrared detector based on a CMOS process, and the pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure on the CMOS measurement circuit system which are prepared by adopting a full CMOS process; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures, and the columnar structures are located between the reflecting layer and the infrared conversion structure; the reflecting layer comprises a reflecting plate and a supporting base, and the infrared conversion structure is electrically connected with the CMOS measurement circuit system through the columnar structures and the supporting base; the infrared conversion structure comprises an absorption plate and a beam structure, and the absorption plate is electrically connected with the columnar structures through the beam structure; the columnar structures comprise at least two layers of stand columns, and each layer of stand columns can be at least one of solid metal columns, non-metal solid columns or hollow columns. The pixel further comprises a reinforcing structure which is used for enhancing the connection stability between the columnar structures and the infrared conversion structure. The problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved. The sensitivity is high and the stability is good.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, and in particular to an infrared detector pixel and an infrared detector based on a CMOS process. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensi...

AI Technical Summary

Problems solved by technology

[0011] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides an infrared detector pixel and an infrared detector based on a CMOS process to solve the problem of low performance, low pixel scale, and good performance of traditional MEMS process infrared detectors. Low rate and other issues, while improving the detection sensitivity, and improve the structural stability

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