Plating method, plating device, and non-volatile storage medium in which program is stored
A technology of plating and coating film, which is applied in the direction of electrolysis process, electrolysis components, semiconductor devices, etc., and can solve the problems of surface corrosion and surface roughness increase of coating film
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no. 1 approach
[0027] figure 1 An overall configuration diagram of the plating apparatus according to the present embodiment is shown. refer to figure 1 , in the coating apparatus 1, it is equipped with: two cassette tables 12 carrying cassettes 10 containing substrates such as semiconductor wafers; aligning the positions of orientation flats, grooves, etc. of the substrates in a predetermined direction a substrate loading and unloading unit 20 for loading and unloading substrates from the mounted substrate holder 18; and a spin dryer 16 for drying the plated substrate by rotating it at high speed. A substrate transfer device 22 , for example, a transfer robot, which transfers substrates between these units, is arranged substantially in the center of these units. The substrate may be any substrate such as a semiconductor wafer, a printed circuit board, a liquid crystal substrate, or MEMS. The substrate may be circular, square (polygonal), or any other shape. A pattern (concave-convex) is...
no. 2 approach
[0071] Figure 11 It is a schematic configuration diagram showing a connection example of a rectifier according to the second embodiment. In the above embodiment, the common rectifier 71 (rectifier 72) is used to supply the film-forming current and the protection current to the surface S1 (surface S2), but as Figure 11 As shown, the rectifiers 73 and 74 for supplying the protection current may be provided separately from the rectifiers 71 and 72 for supplying the film-forming current. In this case, a switch 81 as a switching device is provided in the middle of the wiring 71A between the positive electrode of the rectifier 71 and the anode 65 , and a switch 83 as a switching device is provided in the middle of the wiring 73A between the positive electrode of the rectifier 73 and the anode 65 . In addition, a switch 82 as a switching device is provided in the middle of the wiring 72A between the positive electrode of the rectifier 72 and the anode 65 , and a switch 84 as a swi...
no. 3 approach
[0075] Figure 12 It is a schematic configuration diagram showing a connection example of a rectifier according to the third embodiment. In this embodiment, it is comprised so that it can switch and output from the single rectifier 73 (74) for protective currents to the surface S1 side and the surface S2 side. Thus, omit Figure 11 One of the rectifiers 73 and 74 for the protection current in the circuit. exist Figure 12 In the figure, the case where the rectifier 74 is omitted and the output is switched from the rectifier 73 to the surface S1 side and the surface S2 side is shown. In the present embodiment, the positive electrode of the rectifier 73 and the anode 65 on the surface S2 side are connected by the wiring 73C, and a switch 83A as a switching device is provided in the middle of the wiring 73C. The switch 83A may be a mechanical switch or a semiconductor switch.
[0076] When the film forming current is supplied to the surfaces S1 and S2, the switches 83 and 83...
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