Droplet target generator vibration monitoring device and method

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a droplet target generator vibration monitoring device and method. The droplet target generator vibration monitoring device comprises a droplet target generator, wherein a micropore nozzle is arranged on the lower side of the droplet target generator. The droplet target generator vibration monitoring device further comprises two sets of probes, wherein the probes are arranged along the X axis and the Y axis of the micropore nozzle respectively, and the probes are connected with probe arms respectively. The droplet target generator vibration monitoring device further comprises two groups of laser generators. Compared with a traditional camera monitoring method and the like, the droplet target generator vibration monitoring method provided by the invention has the beneficial effects that the monitoring method provided by the invention directly monitors the droplet target generator, and the monitoring mode of the atomic force probe has very high precision and has relatively good monitoring capability on a transverse high-frequency motion signal of the droplet target generator; and meanwhile, the monitoring modes of the atomic force probes are not influenced by the temperature of the measured surface, a real-time monitoring signal can be used as a reference signal of a vibration compensation device, a drift correction device and the like of the droplet target generator, and the working stability of the droplet target generator can be effectively enhanced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a vibration monitoring device and method for a droplet target generator. Background technique [0002] The semiconductor industry has been committed to reducing the feature size of integrated circuits, which requires the development of lithography technology with higher etching resolution. An extreme ultraviolet (EUV) light source with a shorter exposure wavelength has been applied to the lithography technology, which mainly uses the EUV light with a center wavelength of 13.5nm and a bandwidth of 2% as the exposure light source of the lithography process. see figure 1 , the main principle is that high-frequency pulsed laser bombards the target to generate high-temperature and high-density plasma, in which ionization and recombination processes are constantly occurring and radiate extreme ultraviolet rays with a wavelength of 13.5nm. The target material is me...

AI Technical Summary

Problems solved by technology

[0003] The main problem at present is that the frequency of the vibration source 1 applied in the droplet target generator 2 is 20 to 50 megahertz, and there is an uncontrollable lateral drift at the place where the vibration wave 5 is transmitted to the microhole nozzle 8, which makes the downward spraying Tin droplets also have uncontrollable lateral movement, and an air source is also provided. The lateral movement of tin droplets will prevent the laser pulse from accurately bombarding the center of the droplet

This method cannot ensure that every tin droplet 6 is photographed, nor can it accurately calibrate the reference position to judge the frequency of the lateral motion of the tin droplet 6, and more importantly, monitoring the movement of the tin droplet 6 cannot directly reflect the droplet target generator 2 working status

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