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Semiconductor device, manufacturing method thereof and electronic equipment

A manufacturing method and technology of electronic equipment, applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve problems such as leakage current and affecting refresh characteristics of semiconductor devices, so as to suppress leakage current, satisfy conductivity, and suppress leakage current the effect of

Pending Publication Date: 2021-12-10
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the high integration of buried trench semiconductor devices, the distance between the gate stack and the contact node is short, which will cause leakage current problems, which will affect the refresh characteristics of semiconductor devices

Method used

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  • Semiconductor device, manufacturing method thereof and electronic equipment
  • Semiconductor device, manufacturing method thereof and electronic equipment
  • Semiconductor device, manufacturing method thereof and electronic equipment

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Embodiment Construction

[0029] Next, the technical solutions in the embodiments of the present invention will be described in connection with the drawings of the embodiments of the present invention, and it is understood that the described embodiments are merely the embodiments of the present invention, not all of the embodiments.

[0030] Various schematic diagrams of the embodiments of the present invention are shown in the drawings, which are not drawn to scale. Among them, in order to clearly understand the purpose, some details are enlarged and certain details may be omitted. The relative size of the various regions, layers shown in the figures, the relative size thereof, the positional relationship is merely exemplary, and in practice, it may deviate due to manufacturing tolerances or technical limits, and those skilled in the art according to actual The required area / layer having different shapes, sizes, relative positions can be designed.

[0031] Hereinafter, the term "first", "second" or the ...

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Abstract

The invention discloses a semiconductor device, a manufacturing method thereof and electronic equipment, relates to the technical field of semiconductor manufacturing, and aims to control the resistance value of a gate electrode, suppress the generation of leakage current and improve the refresh performance of the semiconductor device. The semiconductor device includes a substrate and a gate stack embedded in the substrate, wherein a gate electrode of the gate stack including an upper gate, a lower gate, and a peripheral gate; the upper gate is of an n-shaped structure, the peripheral gate is of a U-shaped structure, the upper gate covers the top surface and the upper portion of the side surface of the lower gate, and the peripheral gate covers the bottom surface and the lower portion of the side surface of the lower gate; and the bottom surface of the upper gate is connected with the top surface of the peripheral gate. The invention also provides a manufacturing method of the semiconductor device. The semiconductor device provided by the invention is applied to electronic equipment.

Description

Technical field [0001] The present invention relates to the field of semiconductor technologies, and more particularly to a semiconductor device and a manufacturing method thereof, an electronic device. Background technique [0002] The grooved semiconductor device (BCAT) is a semiconductor device that embed a gate stack (word line) in the substrate. This semiconductor device has a relatively high integration, which has a wide range of applications in the integrated circuit. [0003] During the manufacturing process of the grooved semiconductor device, the groove is required to open downward, and a gate stack is formed in the trench. Since the integration of the grooved semiconductor device is high, the distance between the gate stack and the contact node is short, which will generate a problem of leakage current, thereby affecting the refresh characteristics of the semiconductor device. Inventive content [0004] It is an object of the present invention to provide a semiconduct...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L29/423H01L21/336
CPCH01L29/78H01L29/0603H01L29/0684H01L29/4236H01L29/66477
Inventor 郭炳容杨涛李俊峰王文武
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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