Unlock instant, AI-driven research and patent intelligence for your innovation.

Device for controlling semiconductor circuit breakers in the high-voltage range

A technology of power switches and semiconductors, applied in the direction of electronic switches, electrical components, logic circuit interface devices, etc., can solve the problems of cost and cost

Pending Publication Date: 2021-12-10
WEBASTO AG
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the resulting interference may cause voltage peaks on the other secondary windings of the transformer
These interferences have to be reduced relatively expensively by means of EMC filter components
Another disadvantage of this method is the use of a transformer with multiple secondary windings
Due to the required dielectric strength and the use of high-quality and thus more expensive insulating materials, these secondary windings are complex and expensive

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device for controlling semiconductor circuit breakers in the high-voltage range
  • Device for controlling semiconductor circuit breakers in the high-voltage range
  • Device for controlling semiconductor circuit breakers in the high-voltage range

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] figure 1 with figure 2 The state of the art is stated in the introductory part.

[0023] image 3 One embodiment of the device according to the invention is shown. This implementation is compatible with figure 2 The device shown in differs in that the electronic load switches S1, S2 are supplied with the drive voltage UL1 by using a transformer with a single secondary winding, more in detail, by using a transformer with three zero-potential HV-levels The lower secondary winding provides the drive voltage UL1 to the two electronic load switches S1 and S2.

[0024] Driving voltage Uh for controlling electronic load switches S12 and S21 1 and Uh 2 not supplied through the other secondary windings of the transformer to image 3 device, but is derived from the sole secondary voltage of the transformer by means of a charge pump.

[0025] Used to provide driving voltage Uh 1 The charge pump comprises a capacitor C1 connected on the one hand to the side of the load L...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a device for controlling a plurality of semiconductor circuit breakers (S12, S21) by means of driver voltages for the synchronous operation of a plurality of loads (Last1, Last2) in the high-voltage range, wherein the driver voltages (Uh1, Uh2) can be provided by a transformer. According to the invention, the driver voltages (Uh1, Uh2) for the semiconductor circuit breakers are tapped from a single secondary winding of the transformer, wherein electronic voltage level converter circuits are provided to obtain the driver voltages (Uh1, Uh2) from the secondary winding of the transformer at the required magnitude.

Description

technical field [0001] The invention relates to a device for simultaneously operating a plurality of semiconductor power switches in the high voltage range in the case of pulsed loads. Background technique [0002] with the help of figure 1 with 2 The actuation of semiconductor power switches by means of conventional devices of the type mentioned at the outset is explained. [0003] Such as figure 1 As shown in , in order to operate two semiconductor power switches (MOSFET, IGBT, bipolar transistors), the 15V required for the operation at the control input (gate, base) is always equal to the The reference level has a defined potential difference. If this is not the case, the switch cannot be turned on. In the worst case, this can even lead to damage of the semiconductor power switch. Reference level at figure 1 The high voltage application shown can be, for example, 0V ( figure 1 circuit variant on the left in the center) or 500V ( figure 1 The circuit variant on th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03K17/691
CPCH03K17/691H03K2217/0063H03K2217/0081H03K17/10H03K17/12H03K17/16H03K17/56H03K19/017509
Inventor A·亨纳H·雷西贝格尔K·弗莱德
Owner WEBASTO AG