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Infrared detector mirror image pixel based on CMOS process and infrared detector

An infrared detector and process technology, applied in the field of infrared detection, can solve the problems of low infrared detector performance, low pixel scale, and low yield rate, and achieve the effect of not being limited by the process, reducing transportation, and reducing transportation costs

Active Publication Date: 2021-12-31
BEIJING NORTH GAOYE TECH CO LTD
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Problems solved by technology

[0012] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides an infrared detector image element and an infrared detector based on CMOS technology, which can solve the problem of low performance and low pixel scale of traditional MEMS technology infrared detectors. , low yield and other issues

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  • Infrared detector mirror image pixel based on CMOS process and infrared detector
  • Infrared detector mirror image pixel based on CMOS process and infrared detector
  • Infrared detector mirror image pixel based on CMOS process and infrared detector

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Embodiment Construction

[0097] In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the solutions of the present invention will be further described below. It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0098] In the following description, many specific details have been set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here; obviously, the embodiments in the description are only some embodiments of the present invention, and Not all examples.

[0099] figure 1 A schematic diagram of a three-dimensional decomposition structure of an infrared detector image element based on a CMOS process provided by an embodiment of the present invention, figure 2 A schematic diagram of a three-dimensional decomposition structure of...

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Abstract

The invention relates to an infrared detector mirror image pixel based on a CMOS process and an infrared detector, the mirror image pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure which are both prepared by using the CMOS process, and the CMOS infrared sensing structure is directly prepared above the CMOS measurement circuit system; the CMOS infrared sensing structure comprises a reflecting layer and an infrared conversion structure, the infrared conversion structure is electrically connected with the CMOS measuring circuit system through the supporting base, and a material forming the thermosensitive layer comprises at least one of amorphous silicon, titanium oxide, vanadium oxide or titanium vanadium oxide; a resonant cavity is not formed between the CMOS measurement circuit system and the infrared conversion structure, or the formed resonant cavity cannot reflect the infrared light to the infrared conversion structure, or the infrared conversion structure reflects the infrared light. According to the technical scheme, the problems that a traditional MEMS technology infrared detector is low in performance, low in pixel scale, low in yield and the like are solved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, and in particular to an infrared detector mirror image element and an infrared detector based on a CMOS process. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/10G01J5/20G01J5/24G01J5/58G01J5/00
CPCG01J5/10G01J5/20G01J5/24G01J5/58G01J5/00G01J2005/103G01J2005/106G01J2005/202G01J2005/0077Y02P70/50
Inventor 翟光杰武佩潘辉翟光强
Owner BEIJING NORTH GAOYE TECH CO LTD
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