Epitaxial reaction chamber recovery method, epitaxial growth device and epitaxial wafer

Abstract

The embodiment of the invention discloses a recovery method of an epitaxial reaction chamber, an epitaxial growth device and an epitaxial wafer. The method includes: loading a new base into a baking chamber, and nonlinearly raising the temperature in the baking chamber according to time so as to bake the new base; after baking of the new base is completed, installing the new base in an epitaxial reaction chamber, and raising the temperature in the epitaxial reaction chamber according to set baking conditions so that the interior of the epitaxial reaction chamber can be baked; and after baking in the epitaxial reaction chamber is completed, starting to prepare an epitaxial wafer and measuring the MCLT value of the epitaxial wafer.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of semiconductor preparation, and in particular to a recovery method for an epitaxial reaction chamber, an epitaxial growth device, and an epitaxial wafer. Background technique [0002] Conventional wafers are prepared through a single crystal silicon rod growth process, a slicing process, grinding engineering, a grinding process, a polishing process, and a cleaning process for removing abrasives or impurities attached to the wafer after the polishing process. Wafers prepared by this method are called polished wafers, and wafers on which a single-crystal thin film (also called an epitaxial layer) is grown on the surface of the polished wafer are called epitaxial wafers. [0003] Compared with polished wafers, epitaxial wafers have the characteristics of less surface defects, excellent crystallinity and controllable resistivity, and are widely used in highly integrated integrated cir...

AI Technical Summary

Problems solved by technology

[0004] At present, after replacing the base of the epitaxial reaction chamber, due to the adsorption of moisture and metal impurities in the new base, after the preventive maintenance (PM) of the epitaxial reaction chamber, the metal impurities in the new base still remain No removal, which leads to a high concentration of moisture and metal contaminants in the thermally stable state of the epitaxial reaction chamber at the initial recovery stage of the epitaxial reaction chamber, and the MCLT value of the produced epitaxial wafer is very low and cannot meet customer specifications

Therefore, in order to remove the moisture and metal contaminants in the thermally stable state in the epitaxial reaction chamber, it is necessary to bake and spread the epitaxial reaction chamber for a long enough time, so that the MCLT value of the epitaxial wafer obtained from the metal contamination test reach the set value, in which case the productivity of the epitaxial wafers is reduced

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