Annular isolation structure in high-voltage BCD structure, and manufacturing method thereof

A technology of isolation structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, transistors, etc., can solve problems such as easy breakdown, and achieve the effect of improving concentration distribution and increasing breakdown voltage

Pending Publication Date: 2022-01-11
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the N-type buried layer 23 on the left side of the bottom of the P-ring is prone to breakdown

Method used

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  • Annular isolation structure in high-voltage BCD structure, and manufacturing method thereof
  • Annular isolation structure in high-voltage BCD structure, and manufacturing method thereof
  • Annular isolation structure in high-voltage BCD structure, and manufacturing method thereof

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Embodiment Construction

[0044] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0045] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, or in a specific orienta...

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Abstract

The invention discloses an annular isolation structure in a high-voltage BCD structure, and a manufacturing method thereof, and relates to the field of semiconductor manufacturing. The manufacturing method of the annular isolation structure in the high-voltage BCD structure comprises the following steps: forming the annular isolation structure between a high-voltage circuit region and a low-voltage circuit region, wherein the annular isolation structure is composed of a first-type well region and a first-type buried layer; defining second-type buried layer patterns on two sides of the annular isolation structure through a photoetching process, wherein the left side of the annular isolation structure comprises at least two second-type buried layer patterns with different widths; and forming second-type buried layers in the substrate corresponding to the second-type buried layer patterns through an ion implantation process. The problem that a buried layer on the left side of an existing annular isolation structure is prone to breakdown is solved. The effects of improving the concentration distribution of the buried layers on the two sides of the annular isolation structure and improving the breakdown voltage of the annular isolation structure are achieved.

Description

technical field [0001] The present application relates to the field of semiconductor manufacturing, in particular to a ring-shaped isolation structure in a high-voltage BCD structure and a manufacturing method thereof. Background technique [0002] The high-voltage BCD (Bipolar-CMOS-DMOS) structure is composed of a low-voltage circuit area 101 and a high-voltage circuit area 102. The high-voltage circuit area 101 is isolated from the low-voltage circuit area 101 by a high-voltage isolation ring 106, such as figure 1 shown. Part of the high-voltage isolation ring 106 is used to form a level shift circuit (level shift), and the level shift circuit is isolated from other parts of the circuit through the ring isolation structure 103. When the conductivity type of the ring isolation structure is P type, the ring isolation structure 103 Known as the P-ring. Wherein, the annular isolation structure 103 is an annular structure with inconsistent width. [0003] The drain terminal ...

Claims

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Application Information

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IPC IPC(8): H01L21/76H01L27/06H01L29/06
CPCH01L21/76H01L27/0623H01L29/0642
Inventor 杨文清金锋王佰胜
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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