Charge storage type insulated gate bipolar transistor and preparation method thereof

A bipolar transistor and charge storage technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as belt bending, increased concentration, and low forward conduction voltage drop, so as to reduce Vceon and reduce Effects of forward voltage drop, enhanced withstand voltage characteristics, and reliability

Active Publication Date: 2019-02-15
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The present invention aims at the adverse effects of the doping concentration and thickness of the charge storage layer on the breakdown voltage of the device in the prior art, and limits the compromise between the breakdown voltage of the device, the forward conduction voltage drop and the turn-off loss, and provides A charge storage type insulated gate bipolar transistor with a heterojunction structure, which makes the charge storage layer and the drift region form a heterojunction in traditional devices, caus

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0050] This embodiment provides a strained Si~Si 1-x Ge x Insulated gate bipolar transistor with homogeneous heterojunction charge storage layer, its cell structure includes: collector metal, P-type collector region, N-type field stop layer, N-drift region, N-type charge storage layer, P-type Base region, P+ emitter region, N+ emitter region, trench gate structure and emitter metal; collector metal is arranged on the back of P-type collector region; N-type field stop layer is arranged on the front of P-type collector region; N- The drift region is arranged on the front of the N-type field stop layer; the P-type base region is arranged on the top layer of the N-drift region; the P+ emitter region and the N+ emitter region in contact with both sides of the P+ emitter region are arranged side by side on the top layer of the P-type base region ; There is an N-type charge storage layer between the P-type base region and the N-drift region; the trench gate structure includes a tren...

Embodiment 2

[0055] This embodiment provides a strained Si~Si 1-x Ge x For the insulated gate bipolar transistor of the homogeneous heterojunction charge storage layer, the structure of this embodiment is the same as that of embodiment 1 except that a P-type layer with a junction depth of 0.5-1 μm is introduced at the bottom of the trench gate structure.

[0056] This embodiment introduces a P-type layer connected to the gate electrode through a gate dielectric layer, and the P-type layer extends laterally to both sides to the N-drift region below the heterojunction N-type charge storage layer, thereby shielding the N-type charge The impact of negative charges in the storage layer improves the concentration of the electric field at the bottom of the trench and improves the breakdown voltage and reliability of the device.

Embodiment 3

[0058] This embodiment provides a strained Si~Si 1-x Ge x The insulated gate bipolar transistor of the homogeneous heterojunction charge storage layer is the same as that of Embodiment 2 except that a split electrode and a split electrode dielectric layer are introduced into the trench gate structure to form a split trench gate structure.

[0059]The gate electrode depth in the split trench gate structure is greater than the junction depth of the P-type base region and smaller than the junction depth of the N-type charge storage layer; the depth of the split electrode is greater than the junction depth of the N-type charge storage layer; the split The electrode is connected to the gate electrode through the gate dielectric layer, and is connected to the N-type charge storage layer and the N-drift region through the split electrode dielectric layer; the thickness of the split electrode dielectric layer is greater than the thickness of the gate dielectric layer; the split electr...

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Abstract

The invention discloses a charge storage type insulated gate bipolar transistor and a preparation method thereof, and belongs to the technical field of power semiconductors. On the basis of a traditional charge storage type IGBT device structure, a charge storage layer and a drift region form a heterojunction structure, so that the energy band on one side, close to an emitting electrode, of the drift region is bent, so as to form a barrier for blocking a few carriers in the drift region from flowing away from a base region, and the concentration of a few carriers in the current position is increased. According to the invention, the carrier distribution concentration of the drift region is improved, and the conductance modulation effect of the IGBT is enhanced, so that the positive conducting voltage drop Vceon of the device is reduced, and the compromise between the positive conducting voltage drop Vceon of the IGBT and the turn-off loss Eoff is optimized; and the defect that the breakdown voltage is reduced when the Vceon of the traditional charge storage layer is reduced is overcome; and a combination of different forbidden band width semiconductor materials for forming the heterojunction structure can be adjusted, so that the working characteristics of the device can be further optimized.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a charge storage type insulated gate bipolar transistor and a preparation method thereof. Background technique [0002] IGBT is a device composed of MOSFET (input stage) and PNP transistor (output stage). It has the characteristics of easy driving, low input impedance and fast switching speed of MOSFET devices, and the on-state current density of bipolar devices. Large, low conduction voltage, low loss, and good stability. Based on these excellent device characteristics, IGBT has become a mainstream power device widely used in medium and high voltage fields in recent years, such as high-speed rail, electric vehicles, motor drives, grid-connected technology, energy storage power stations, AC / DA conversion and frequency conversion speed regulation and other fields . The use of IGBT for power conversion can improve the efficiency and quality of powe...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L21/331H01L29/739
CPCH01L29/0607H01L29/66348H01L29/7397
Inventor 张金平赵倩罗君轶刘竞秀李泽宏张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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