Heterojunction solar cell and preparation method thereof
A solar cell and heterojunction technology, which is applied in the field of solar cells, can solve the problems of poor stability and high cost of transparent conductive films, and achieve the effects of being beneficial to environmental protection, improving stability, and preventing the influence of water vapor
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Embodiment 1
[0053] This embodiment provides a heterojunction solar cell, please refer to figure 1 ,include:
[0054] Semiconductor substrate layer 1;
[0055] A first transparent conductive film 2 located on one side of the semiconductor substrate layer 1, the material of the first transparent conductive film 2 includes doped zinc oxide;
[0056] The first gate lines 3 located on the surface of part of the first transparent conductive film 2 facing away from the semiconductor substrate layer 1, a plurality of the first gate lines 3 are arranged at intervals;
[0057] The protective film 4 located on the surface of part of the first transparent conductive film 2 facing away from the semiconductor substrate layer 1, the protective film 4 is arranged adjacent to the first gate line 3 and at least blocks the first gate line Line 3 part of the sidewall.
[0058] The semiconductor substrate layer 1 includes a silicon substrate, for example, an N-type crystalline silicon substrate.
[0059] ...
Embodiment 2
[0083] This example provides a method for preparing a heterojunction solar cell, please refer to figure 2 , including the following steps:
[0084] S1: providing a semiconductor substrate layer 1;
[0085] S2: forming a first transparent conductive film 2 on one side of the semiconductor substrate layer 1, the material of the first transparent conductive film 2 includes doped zinc oxide;
[0086] S3: forming a protective film 4 on the surface of part of the first transparent conductive film 2 away from the semiconductor substrate layer 1, and the protective film 4 exposes part of the first transparent conductive film 2;
[0087] S4: Form a first grid line on the surface of the first transparent conductive film 2 exposed by the protective film 4, a plurality of the first grid lines are arranged at intervals, and the protective film is in phase with the first grid line adjacent to and shield at least part of the sidewall of the first gate line.
[0088] In this embodiment, it ...
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