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Spinning electron heterojunction and preparation method thereof

A technology of spin electrons and heterojunction, applied in the field of heterojunction, can solve the problem of low conversion efficiency of spin-orbit torque and achieve the effect of enhancing the conversion efficiency of spin-orbit torque

Pending Publication Date: 2022-01-18
SHENZHEN TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a spin electron heterojunction and its preparation method, aiming at solving the problem of the low spin-orbit torque conversion efficiency of the heterojunction formed by existing light metals and rare earth iron garnets. low problem

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  • Spinning electron heterojunction and preparation method thereof
  • Spinning electron heterojunction and preparation method thereof
  • Spinning electron heterojunction and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0043] CuO with perpendicular magnetic anisotropy prepared by magnetron sputtering x / Tm 3 Fe 5 o 12 Heterojunction, the specific method is as follows:

[0044] Gd 3 sc 2 Ga 3 o 12 The single crystal substrate is annealed at 1000°C for 6 hours in an oxygen environment of atmospheric pressure, and the annealed substrate is favorable for Tm 3 Fe 5 o 12 film growth;

[0045] The background vacuum of the magnetron sputtering chamber is less than 5x10 -8 mTorr(mT), the target used in magnetron sputtering is Tm 3 Fe 5 o 12 The ceramic target is radio-frequency sputtering, the sputtering power is 100w, and the sputtering time is 30 minutes. The final prepared Tm 3 Fe 5 o 12 The thickness is 4nm. During the sputtering process, the work is Ar, the pressure is 6mT, a small amount of oxygen is introduced, and the oxygen flow rate is 3% of the Ar flow rate. During the sputtering process, the substrate temperature is kept at 600°C; No need for annealing;

[0046] Subseq...

Embodiment 2

[0050] CuO with perpendicular magnetic anisotropy prepared by magnetron sputtering x / Tm 3 Fe 5 o 12 Heterojunction, the specific method is as follows:

[0051] Gd 3 Ga 5 o 12 The single crystal substrate is annealed at 1100°C for 7 hours in an atmosphere of oxygen at atmospheric pressure, and the annealed substrate is favorable for Tm 3 Fe 5 o 12 film growth;

[0052] The background vacuum of the magnetron sputtering chamber is less than 5x10 -8 mTorr(mT), the target used in magnetron sputtering is Tm 3 Fe 5 o 12 The ceramic target adopts radio frequency sputtering, the sputtering power is 100w, and the sputtering time is 50 minutes. The final prepared Tm 3 Fe 5 o 12 The thickness is 8nm. During the sputtering process, the work is Ar, the air pressure is 8mT, a small amount of oxygen is introduced, and the oxygen flow rate is 5% of the Ar flow rate. During the sputtering process, the substrate temperature is kept at 800°C; No need for annealing;

[0053] Su...

Embodiment 3

[0056] CuO with perpendicular magnetic anisotropy prepared by magnetron sputtering x / Tm 3 Fe 5 o 12 Heterojunction, the specific method is as follows:

[0057] Gd 3 sc 2 Ga 3 o 12 The single crystal substrate is annealed at 900°C for 6 hours in an atmosphere of oxygen at atmospheric pressure, and the annealed substrate is favorable for Tm 3 Fe 5 o 12 film growth;

[0058] The background vacuum of the magnetron sputtering chamber is less than 5x10 -8 mTorr(mT), the target used in magnetron sputtering is Tm 3 Fe 5 o 12 The ceramic target adopts radio frequency sputtering, the sputtering power is 100w, and the sputtering time is 90 minutes. The final prepared Tm 3 Fe 5 o 12 The thickness is 12nm. During the sputtering process, the work is Ar, the air pressure is 6mT, a small amount of oxygen is introduced, and the oxygen flow rate is 3% of the Ar flow rate. During the sputtering process, the substrate temperature is kept at 500°C; No need for annealing;

[00...

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Abstract

The invention discloses a spinning electron heterojunction and a preparation method thereof, and the preparation method comprises the steps: preparing a Tm3Fe5O12 film on a single crystal substrate; sputtering a Cu layer on the Tm3Fe5O12 thin film, and preparing a Cu / Tm3Fe5O12 heterojunction; placing the Cu / Tm3Fe5O12 heterojunction in air for natural oxidation, preparing the CuOx / Tm3Fe5O12 heterojunction, and x being larger than 0 and smaller than 1. According to the method, the principle that CuOx is formed through natural oxidation of Cu, the spin Hall effect can also be generated, and the spin orbit torque conversion efficiency is equivalent to that of Pt is utilized, the prepared CuOx / Tm3Fe5O12 heterojunction has perpendicular magnetic anisotropy, the spin orbit torque conversion efficiency can be enhanced through natural oxidation of Cu, and the spin orbit torque conversion efficiency of the heterojunction is 0.018.

Description

technical field [0001] The invention relates to the technical field of heterojunction, in particular to a spin electron heterojunction and a preparation method thereof. Background technique [0002] Ferrimagnetic insulator materials have a wide range of applications in the field of spintronics. Rare earth iron garnet (Re 3 Fe 5 o 12 , Re is a rare earth element, usually Y, Tm, Tb, Gd, etc.) is regarded as an ideal ferrimagnetic insulator material, which has potential applications in the field of magnetic storage. Due to the strong spin-orbit effect of heavy metals, a large number of literatures have reported quantum anomalous Hall effect phenomena based on heavy metal (Pt, Ta, W) / rare earth iron garnet heterojunctions. However, the scarcity of heavy metal materials greatly limits their potential commercial applications in the field of spintronic devices. The resources of light metal materials are very abundant, but their spin-orbit effects are weak compared with heavy m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/14H01L43/10H01L43/04H01L43/06H01L43/08H10N52/01H10N50/10H10N52/00H10N52/80
CPCH10N52/80H10N52/101H10N52/01H10N50/85H10N50/10
Inventor 安红雨叶志祥仇明侠
Owner SHENZHEN TECH UNIV
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