Piezoelectric element

A technology of piezoelectric elements and piezoelectric layers, applied in electrical elements, piezoelectric/electrostrictive/magnetostrictive devices, circuits, etc., can solve the problem of reduced driving reliability and achieve high driving reliability

Pending Publication Date: 2022-01-21
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] On the other hand, in the PZT film, it is said that if there is excess Pb, the driving reliability tends to decrease in a high-humidity environment, and it is necessary to reduce the excess Pb as much as possible.

Method used

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Embodiment Construction

[0074] Embodiments of the present disclosure will be described below with reference to the drawings. In this specification, the numerical range represented using "-" means the range which includes the numerical value described before and after "-" as a lower limit and an upper limit. In the numerical ranges described step by step in the present disclosure, the upper limit or lower limit described in a certain numerical range may be replaced with the upper limit or lower limit of the numerical range described in other steps. In addition, in the numerical range described in this indication, the upper limit or the lower limit described in a certain numerical range may be replaced with the value shown in an Example.

[0075] figure 1 is a schematic cross-sectional view of the piezoelectric element of this embodiment. Such as figure 1 As shown, the piezoelectric element 1 is an element in which a lower electrode layer 12 , a growth control layer 14 , a piezoelectric layer 16 , a...

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Abstract

The present invention provides a piezoelectric element which comprises a piezoelectric layer constituted of a Pb-containing perovskite type oxide and which exhibits high driving reliability even in a warm environment. This piezoelectric element comprises, in the given order on a substrate, the following: a lower electrode layer; a growth control layer; a piezoelectric layer which contains a perovskite type oxide containing lead as a primary A-site component; and an upper electrode layer. The growth control layer contains a metal oxide represented by MdN1-dOe. M comprises one or more metal elements able to be substituted at A-sites in the perovskite type oxide. If X denotes the electronegativity of M, 1.41X-1.05 <= d <= A1.exp(-X / t1)+y0, where A1=1.68x1012, t1=0.0306, and y0=0.59958. The perovskite type oxide is represented by (Pba1 alpha a2)(Zrb1Tib2 beta b3)Oc, and 0.5 < a1 / (b1+b2+b3) < 1.07.

Description

technical field [0001] The present disclosure relates to a piezoelectric element. Background technique [0002] It is known that lead zirconate titanate (Pb(Zr,Ti)O) with excellent piezoelectricity and ferroelectricity 3 , hereinafter referred to as PZT. ) film composed of. The PZT film exerts its ferroelectricity, and is used for a ferroelectric memory (FeRAM: Ferroelectric Random Access Memory) which is a nonvolatile memory. Furthermore, in recent years, MEMS piezoelectric elements using PZT films have been put into practical use through integration with MEMS (Micro Electro-Mechanical Systems) technology. PZT films are deployed in various devices such as inkjet heads (actuators), micromirror devices, angular velocity sensors, gyro sensors, and vibration power generation devices. [0003] In order to realize the excellent piezoelectricity and ferroelectricity required for the above-mentioned various devices, the PZT film needs to be composed of a crystal having a good p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/187
CPCC23C14/088H10N30/10516H10N30/8554H10N30/079H10N30/076
Inventor 梅田贤一奥野幸洋新川高见
Owner FUJIFILM CORP
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