Semiconductor longitudinal device and production method thereof

Abstract

The invention discloses a semiconductor longitudinal device and a production method thereof. A device main body part of the semiconductor longitudinal device is sequentially divided into a first conductive type heavily doped region, a second conductive type lightly doped region and a first conductive type drift region, and the device main body part is concavely provided with a deep groove for respectively placing a control gate electrode and a shield gate electrode in an insulating manner; and one side area of the top layer of the first conductive type heavily doped region is provided with a gap, the gap is filled with the second conductive type heavily doped region, the other side area of the top layer of the first conductive type heavily doped region is concavely arranged to form a shallow groove, the second conductive type heavily doped region is tightly attached to the deep groove, the shallow groove and the second conductive type heavily doped region are spaced by a preset distance to form a resistance region therebetween, and a resistance control gate for controlling the characteristics of the resistance region is placed in the shallow groove in an insulating manner. The temperature coefficient of punch-through breakdown voltage of an existing power semiconductor longitudinal device can be effectively reduced, the structure is simple, and the overall power consumption is low when the device works.

Description

technical field [0001] The present application relates to the technical field of power semiconductors, in particular to a semiconductor vertical device and a production method thereof. Background technique [0002] Power semiconductor vertical devices such as Shield-gate trench-Metal-Oxide-Semiconductor Field-Effect Transistor (SGT-MOSFET) work in a harsh temperature environment, and their breakdown voltage is affected by The temperature has a great influence and has a large positive temperature coefficient (that is, the temperature of the breakdown voltage of the device will gradually increase with the increase of the current), which leads to the existence of temperature-related instability problems in the device, which will seriously It affects the reliability of these power semiconductor vertical devices. At the same time, because the temperature coefficient of the breakdown voltage of the power semiconductor vertical device is mainly determined by the material characteri...

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Problems solved by technology

[0003] The embodiment of the present application provides a semiconductor vertical device and its production method to solve the problem that the existing power semiconductor vertical device compensates the temperature coefficient of the punch-through breakdown voltage of the device by building an external circuit, which has a complex structure and increases the overall cost of the device when it is working. The problem of power consumption

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