High-stability light emitting diode chip and manufacturing method thereof

A light-emitting diode, high-stability technology, used in electrical components, circuits, semiconductor devices, etc., can solve problems such as interface corrosion, chip reliability decline, electrode blocking of light, etc., to achieve a large contact area, improve reliability, and tightness. Good results
CN113990994APending Publication Date: 2022-01-28HC SEMITEK ZHEJIANG CO LTD

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
HC SEMITEK ZHEJIANG CO LTD
Publication Date
2022-01-28

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a high-stability light emitting diode chip and a manufacturing method thereof, and belongs to the technical field of semiconductors. A first conduction hole extending to an N-type electrode and a second conduction hole extending to a P-type electrode are formed in an insulating layer of the chip, and welding spots comprise first welding spots and second welding spots. The first welding spots are located in the first conduction holes and on the surface of the insulating layer and electrically connected with the corresponding N-type electrodes, and the second welding spots are located in the second conduction holes and on the surface of the insulating layer and electrically connected with the corresponding P-type electrodes. The parts, located on the surface of the insulating layer, of the first welding spot and the second welding spot are each of a circular truncated cone structure, and the diameter of the cross section of each circular truncated cone structure is gradually decreased in the stacking direction of the chip. And a part of the protective layer of the chip is also coated on the side walls of the circular truncated cone structures of the first welding spot and the second welding spot. By adopting the light emitting diode chip, water vapor and other pollutants can be prevented from permeating between the protective layer and the side wall of the circular truncated cone structure, and the reliability of the light emitting diode chip is improved.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present disclosure relates to the technical field of semiconductors, in particular to a highly stable light-emitting diode chip and a manufacturing method thereof. Background technique

[0002] A light emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor device that can emit light. By using different semiconductor materials and structures, LEDs can cover a full color range from ultraviolet to infrared, and have been widely used in economic life such as display, decoration, and communication.

[0003] The chip is the core device of the LED. In related technologies, the LED chip includes a substrate, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, an N-type electrode, a P-type electrode, an insulating layer, and solder joints; an N-type semiconductor layer, The active layer and the P-type semiconductor layer are sequentially stacked on the surface of the substrate; the P-type semiconduc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More